GC2X10MPS12-247
GeneSic Semiconductor Inc
Description: Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-3; Mounting Style: Through Hole; Package / Case: TO-247-3; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Common Cathode; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 20 A; Forward Voltagen(VF): 1.5 V @ 20 A; Reverse Currentn(IR): 2 uA @ 1200 V; Total Capacitive Charge (QC): 80 nC; Capacitancen(C): 1320 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 164 A; Power Dissipationn(PD): 672 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Overview of GC2X10MPS12-247 by GeneSic Semiconductor Inc

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  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

Price & Stock for GC2X10MPS12-247 by GeneSic Semiconductor Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 94AC2967
Newark Silicon Carbide Schottky Diode, To-247, Product Range:Mps Series, Diode Configuration:Dual Common Cathode, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:100A, Total Capacitive Charge:80Nc, Diode Case Style:To-247 Rohs Compliant: Yes |Genesic Semiconductor GC2X10MPS12-247 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 80
  • 1 $9.0000
$9.0000 Buy Now
DISTI # GC2X10MPS12-247
TME Diode: Schottky rectifying, SiC, THT, 1.2kV, 10Ax2, TO247-3, tube Min Qty: 1 13
  • 1 $11.4000
  • 3 $10.3000
  • 10 $9.0800
  • 30 $8.1600
$8.1600 / $11.4000 Buy Now
NAC Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 20A TO-247-3 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube 0
RFQ
DISTI # C1S305200034261
Chip1Stop Rectifiers Diodes RoHS: Compliant 169
  • 1 $5.4100
  • 10 $4.7800
$4.7800 / $5.4100 Buy Now

CAD Models for GC2X10MPS12-247 by GeneSic Semiconductor Inc
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Part Data Attributes for GC2X10MPS12-247 by GeneSic Semiconductor Inc

GC2X10MPS12-247
GeneSic Semiconductor Inc
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
GENESIC SEMICONDUCTOR INC
Part Package Code
TO-247-3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Additional Feature
FREE WHEELING DIODE, PD-CASE
Application
EFFICIENCY
Case Connection
CATHODE
Configuration
COMMON CATHODE, 2 ELEMENTS
Diode Element Material
SILICON CARBIDE
Diode Type
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.8 V
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
Non-rep Pk Forward Current-Max
100 A
Number of Elements
2
Number of Phases
1
Number of Terminals
3
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Output Current-Max
24 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation-Max
330 W
Rep Pk Reverse Voltage-Max
1200 V
Reverse Current-Max
5 µA
Reverse Test Voltage
1200 V
Surface Mount
NO
Technology
SCHOTTKY
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Want to compare parts?
  1. GC2X10MPS12-247
    GeneSic Semiconductor Inc
    Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 20A TO-247-3; Mounting Style: Through Hole; Package / Case: TO-247-3; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Common Cathode; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 20 A; Forward Voltagen(VF): 1.5 V @ 20 A; Reverse Currentn(IR): 2 uA @ 1200 V; Total Capacitive Charge (QC): 80 nC; Capacitancen(C): 1320 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 164 A; Power Dissipationn(PD): 672 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
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