There are no models available for this part yet.
Overview of GS8161E36DGD-250IV by GSI Technology
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for GS8161E36DGD-250IV by GSI Technology
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
GS8161E36DGD-250IV
|
Avnet Americas | SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 5.5ns/3ns 165-Pin FBGA - Bulk (Alt: GS8161E36DGD-250IV) RoHS: Compliant Min Qty: 144 Package Multiple: 144 Lead time: 24 Weeks, 0 Days Container: Bulk | 0 |
|
$32.6424 / $40.1940 | Buy Now | |
DISTI #
464-8161E36DGD250IV
|
Mouser Electronics | SRAM 1.8/2.5V 512K x 36 18M RoHS: Compliant | 0 |
|
$34.5900 / $43.0800 | Order Now | |
DISTI #
GS8161E36DGD-250IV
|
Avnet Silica | SRAM Chip Sync Quad 1.8V/2.5V 18M-Bit 512K x 36 5.5ns/3ns 165-Pin FBGA (Alt: GS8161E36DGD-250IV) RoHS: Compliant Min Qty: 144 Package Multiple: 144 Lead time: 9 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
CAD Models for GS8161E36DGD-250IV by GSI Technology
Part Data Attributes for GS8161E36DGD-250IV by GSI Technology
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
GSI TECHNOLOGY
|
Part Package Code
|
BGA
|
Package Description
|
LBGA,
|
Pin Count
|
165
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
3A991.B.2.B
|
HTS Code
|
8542.32.00.41
|
Factory Lead Time
|
24 Weeks
|
Access Time-Max
|
5.5 ns
|
Additional Feature
|
FLOW THROUGH OR PIPELINED ARCHITECTURE, ALSO OPERATES AT 2.5V
|
JESD-30 Code
|
R-PBGA-B165
|
JESD-609 Code
|
e1
|
Length
|
15 mm
|
Memory Density
|
18874368 bit
|
Memory IC Type
|
CACHE SRAM
|
Memory Width
|
36
|
Moisture Sensitivity Level
|
3
|
Number of Functions
|
1
|
Number of Terminals
|
165
|
Number of Words
|
524288 words
|
Number of Words Code
|
512000
|
Operating Mode
|
SYNCHRONOUS
|
Operating Temperature-Max
|
85 °C
|
Operating Temperature-Min
|
-40 °C
|
Organization
|
512KX36
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Code
|
LBGA
|
Package Shape
|
RECTANGULAR
|
Package Style
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial
|
PARALLEL
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Seated Height-Max
|
1.4 mm
|
Supply Voltage-Max (Vsup)
|
2 V
|
Supply Voltage-Min (Vsup)
|
1.7 V
|
Supply Voltage-Nom (Vsup)
|
1.8 V
|
Surface Mount
|
YES
|
Technology
|
CMOS
|
Temperature Grade
|
INDUSTRIAL
|
Terminal Finish
|
Tin/Silver/Copper (Sn/Ag/Cu)
|
Terminal Form
|
BALL
|
Terminal Pitch
|
1 mm
|
Terminal Position
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Width
|
13 mm
|
Alternate Parts for GS8161E36DGD-250IV
This table gives cross-reference parts and alternative options found for GS8161E36DGD-250IV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8161E36DGD-250IV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GS8182D36BD-375MT | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8161E36DGD-250IV vs GS8182D36BD-375MT |
CY7C1243KV18-450BZC | QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Cypress Semiconductor | GS8161E36DGD-250IV vs CY7C1243KV18-450BZC |
CY7C1393KV18-333BZI | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165 | Infineon Technologies AG | GS8161E36DGD-250IV vs CY7C1393KV18-333BZI |
GS8182D08BD-375M | QDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8161E36DGD-250IV vs GS8182D08BD-375M |
GS8161E36DD-200V | Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | GS8161E36DGD-250IV vs GS8161E36DD-200V |
IS64LF25618A-7.5TQA3 | 256KX18 CACHE SRAM, 7.5ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | GS8161E36DGD-250IV vs IS64LF25618A-7.5TQA3 |
K7M163645A-FI160 | ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | GS8161E36DGD-250IV vs K7M163645A-FI160 |
GS832118AGD-150VT | Cache SRAM, 2MX18, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 | GSI Technology | GS8161E36DGD-250IV vs GS832118AGD-150VT |
IS61NVP25618A-200TQ | 256KX18 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | GS8161E36DGD-250IV vs IS61NVP25618A-200TQ |
CY7C1418KV18-333BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Infineon Technologies AG | GS8161E36DGD-250IV vs CY7C1418KV18-333BZC |
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