Part Details for GS8342S18AGE-250I by GSI Technology
Overview of GS8342S18AGE-250I by GSI Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for GS8342S18AGE-250I
GS8342S18AGE-250I CAD Models
GS8342S18AGE-250I Part Data Attributes
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GS8342S18AGE-250I
GSI Technology
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Datasheet
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GS8342S18AGE-250I
GSI Technology
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | GSI TECHNOLOGY | |
Part Package Code | BGA | |
Package Description | LBGA, | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e1 | |
Length | 17 mm | |
Memory Density | 37748736 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 18 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 2MX18 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.5 mm | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 15 mm |
Alternate Parts for GS8342S18AGE-250I
This table gives cross-reference parts and alternative options found for GS8342S18AGE-250I. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8342S18AGE-250I, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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GS8342S18AGE-200IT | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, MO-216CAB-1, FPBGA-165 | GSI Technology | GS8342S18AGE-250I vs GS8342S18AGE-200IT |
K7J321882M-FC20 | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | GS8342S18AGE-250I vs K7J321882M-FC20 |
CY7C1423AV18-250BZI | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8342S18AGE-250I vs CY7C1423AV18-250BZI |
CY7C1423BV18-250BZI | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8342S18AGE-250I vs CY7C1423BV18-250BZI |
CY7C1423BV18-250BZC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | GS8342S18AGE-250I vs CY7C1423BV18-250BZC |
UPD44324185F5-E50-EQ2-A | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 | NEC Electronics Group | GS8342S18AGE-250I vs UPD44324185F5-E50-EQ2-A |
HM66AEB18205BP-50 | 2MX18 DDR SRAM, 0.45ns, PBGA165, PLASTIC, FBGA-165 | Renesas Electronics Corporation | GS8342S18AGE-250I vs HM66AEB18205BP-50 |
UPD44324185F5-E40-EQ2-A | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, FBGA-165 | NEC Electronics Group | GS8342S18AGE-250I vs UPD44324185F5-E40-EQ2-A |
CY7C1423AV18-250BZXC | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8342S18AGE-250I vs CY7C1423AV18-250BZXC |
K7J321882M-FC25 | DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | GS8342S18AGE-250I vs K7J321882M-FC25 |