Part Details for HAT2196C-EL-E by Renesas Electronics Corporation
Overview of HAT2196C-EL-E by Renesas Electronics Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for HAT2196C-EL-E
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | HAT2196C - N-Channel Power MOSFET, 20V, 2.5A ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 18000 |
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$0.2372 / $0.2791 | Buy Now |
Part Details for HAT2196C-EL-E
HAT2196C-EL-E CAD Models
HAT2196C-EL-E Part Data Attributes:
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HAT2196C-EL-E
Renesas Electronics Corporation
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Datasheet
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HAT2196C-EL-E
Renesas Electronics Corporation
Nch Single Power Mosfet 20V 2.5A 58Mohm Cmfpak6, CMFPAK, /Embossed Tape
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
Part Package Code | CMFPAK | |
Package Description | CMFPAK-6 | |
Pin Count | 6 | |
Manufacturer Package Code | PWSF0006JA | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 0.093 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e6 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.85 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN BISMUTH | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |