Datasheets
HER308GT-G by: Comchip Technology Corporation Ltd

Rectifier Diode, 1 Element, 3A, 1000V V(RRM),

Part Details for HER308GT-G by Comchip Technology Corporation Ltd

Overview of HER308GT-G by Comchip Technology Corporation Ltd

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for HER308GT-G

Part # Distributor Description Stock Price Buy
DISTI # HER308GT-G-ND
DigiKey DIODE GEN PURP 1KV 3A DO27 Min Qty: 1200 Lead time: 32 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 1,200 $0.2415
  • 2,400 $0.2159
  • 6,000 $0.2049
  • 12,000 $0.1903
  • 30,000 $0.1859
$0.1859 / $0.2415 Buy Now
NAC Rectifier Diode, 1 Element, 3A, 1000V V(RRM) RoHS: Compliant Min Qty: 1200 Package Multiple: 1200 Container: Reel 0
  • 1,200 $0.3230
  • 6,000 $0.3070
$0.3070 / $0.3230 Buy Now

Part Details for HER308GT-G

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HER308GT-G Part Data Attributes:

HER308GT-G Comchip Technology Corporation Ltd
Buy Now Datasheet
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HER308GT-G Comchip Technology Corporation Ltd Rectifier Diode, 1 Element, 3A, 1000V V(RRM),
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD
Package Description O-PALF-W2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Application EFFICIENCY
Case Connection ISOLATED
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.7 V
JEDEC-95 Code DO-27
JESD-30 Code O-PALF-W2
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 3 A
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 1000 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.075 µs
Surface Mount NO
Terminal Form WIRE
Terminal Position AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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