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HFA3101B by:

RF Small Signal Bipolar Transistor

Part Details for HFA3101B by Renesas Electronics Corporation

Overview of HFA3101B by Renesas Electronics Corporation

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Applications Education and Research Internet of Things (IoT) Industrial Automation Computing and Data Storage Aerospace and Defense Transportation and Logistics Healthcare Telecommunications Electronic Manufacturing Automotive

Available Datasheets

Part # Manufacturer Description Datasheet
HFA3101BZ Renesas Electronics Corporation Gilbert Cell UHF Transistor Array
HFA3101BZ96 Renesas Electronics Corporation Gilbert Cell UHF Transistor Array

Price & Stock for HFA3101B

Part # Distributor Description Stock Price Buy
DISTI # HFA3101B
Avnet Americas Trans GP BJT NPN 8V 0.03A 8-Pin SOIC N - Rail/Tube (Alt: HFA3101B) RoHS: Not Compliant Min Qty: 61 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 747 Partner Stock
RFQ
DISTI # C1S329800012225
Chip1Stop Trans GP BJT NPN 8V 0.03A 8-Pin SOIC N RoHS: Not Compliant pbFree: Yes 30
  • 1 $8.7300
$8.7300 Buy Now

Part Details for HFA3101B

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HFA3101B Part Data Attributes

HFA3101B Renesas Electronics Corporation
Buy Now Datasheet
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HFA3101B Renesas Electronics Corporation RF Small Signal Bipolar Transistor
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Collector Current-Max (IC) 0.03 A
Collector-Emitter Voltage-Max 8 V
Configuration COMPLEX
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G8
Number of Elements 6
Number of Terminals 8
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10000 MHz

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