Part Details for HGTD3N60C3S9A by Fairchild Semiconductor Corporation
Overview of HGTD3N60C3S9A by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for HGTD3N60C3S9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-252AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 8284 |
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$0.3675 / $0.4323 | Buy Now |
Part Details for HGTD3N60C3S9A
HGTD3N60C3S9A CAD Models
HGTD3N60C3S9A Part Data Attributes:
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HGTD3N60C3S9A
Fairchild Semiconductor Corporation
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Datasheet
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Compare Parts:
HGTD3N60C3S9A
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 6 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 275 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 455 ns | |
| Turn-on Time-Nom (ton) | 15 ns |
Alternate Parts for HGTD3N60C3S9A
This table gives cross-reference parts and alternative options found for HGTD3N60C3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD3N60C3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTD3N60C3S | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA | Fairchild Semiconductor Corporation | HGTD3N60C3S9A vs HGTD3N60C3S |
| HGTD3N60C3S9A | 6A, 600V, N-CHANNEL IGBT, TO-252AA | Intersil Corporation | HGTD3N60C3S9A vs HGTD3N60C3S9A |