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HGTG18N120BN by:

Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247,

Part Details for HGTG18N120BN by Fairchild Semiconductor Corporation

Overview of HGTG18N120BN by Fairchild Semiconductor Corporation

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Part Details for HGTG18N120BN

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HGTG18N120BN Part Data Attributes

HGTG18N120BN Fairchild Semiconductor Corporation
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HGTG18N120BN Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-247
Pin Count 3
Manufacturer Package Code TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Collector Current-Max (IC) 54 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Fall Time-Max (tf) 200 ns
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390 W
Qualification Status Not Qualified
Rise Time-Max (tr) 22 ns
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 345 ns
Turn-on Time-Nom (ton) 38 ns

Alternate Parts for HGTG18N120BN

This table gives cross-reference parts and alternative options found for HGTG18N120BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG18N120BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG18N120BN 54A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG18N120BN vs HGTG18N120BN
HGTG18N120BN_NL Insulated Gate Bipolar Transistor, 54A I(C), 1200V V(BR)CES, N-Channel, TO-247 Fairchild Semiconductor Corporation HGTG18N120BN vs HGTG18N120BN_NL
HGTG18N120BN 1200V, NPT IGBT, 450-TUBE onsemi HGTG18N120BN vs HGTG18N120BN
Part Number Description Manufacturer Compare
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, 450-TUBE onsemi HGTG18N120BN vs HGTG12N60C3D
IRG4BC20FPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier HGTG18N120BN vs IRG4BC20FPBF
IRG4PC40FPBF Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTG18N120BN vs IRG4PC40FPBF
IRG4BC20SDPBF Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGTG18N120BN vs IRG4BC20SDPBF
SKW25N120 Insulated Gate Bipolar Transistor, 46A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG HGTG18N120BN vs SKW25N120
SGB10N60 Insulated Gate Bipolar Transistor, 21A I(C), 600V V(BR)CES, N-Channel, TO-263AB Siemens HGTG18N120BN vs SGB10N60
IRGP20B120U-EPBF Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN International Rectifier HGTG18N120BN vs IRGP20B120U-EPBF
IRG4BC10KDPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGTG18N120BN vs IRG4BC10KDPBF
IRGPS40B120UPBF Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier HGTG18N120BN vs IRGPS40B120UPBF
HGT1S12N60B3S 27A, 600V, N-CHANNEL IGBT, PLASTIC PACKAGE-4 Intersil Corporation HGTG18N120BN vs HGT1S12N60B3S

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