Part Details for HGTP20N35G3VL by Fairchild Semiconductor Corporation
Overview of HGTP20N35G3VL by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for HGTP20N35G3VL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTP20N35G3VL-ND
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DigiKey | IGBT, 20A, 320V, N-CHANNEL Min Qty: 202 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
326 In Stock |
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$1.4900 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 20A, 320V, N-Channel, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 326 |
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$1.2800 / $1.5000 | Buy Now |
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Chip1Cloud | 20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs | 3910 |
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RFQ |
Part Details for HGTP20N35G3VL
HGTP20N35G3VL CAD Models
HGTP20N35G3VL Part Data Attributes:
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HGTP20N35G3VL
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HGTP20N35G3VL
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 20 A | |
Collector-Emitter Voltage-Max | 320 V | |
Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
Gate-Emitter Thr Voltage-Max | 2.3 V | |
Gate-Emitter Voltage-Max | 12 V | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AUTOMOTIVE IGNITION | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 15000 ns |
Alternate Parts for HGTP20N35G3VL
This table gives cross-reference parts and alternative options found for HGTP20N35G3VL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP20N35G3VL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HGT1S20N35G3VL | 20A, N-CHANNEL IGBT, TO-262AA | Intersil Corporation | HGTP20N35G3VL vs HGT1S20N35G3VL |
HGT1S20N35G3VL | Insulated Gate Bipolar Transistor, 20A I(C), 320V V(BR)CES, N-Channel, TO-262AA | Harris Semiconductor | HGTP20N35G3VL vs HGT1S20N35G3VL |