Datasheets
HL63192DG by: Ushio Opto Semiconductors Inc

Laser Diode,

Part Details for HL63192DG by Ushio Opto Semiconductors Inc

Overview of HL63192DG by Ushio Opto Semiconductors Inc

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Price & Stock for HL63192DG

Part # Distributor Description Stock Price Buy
DISTI # HL63192DG
Avnet Americas 638nm / 700mW AlGaInP Laser Diode - Trays (Alt: HL63192DG) RoHS: Compliant Min Qty: 24 Package Multiple: 1 Lead time: 12 Weeks, 6 Days Container: Tray 0
  • 24 $65.6250
  • 30 $64.2600
  • 50 $62.5800
  • 120 $50.8218
  • 240 $49.3902
  • 1,200 $42.2100
  • 2,400 $40.9500
$40.9500 / $65.6250 Buy Now
DISTI # HL63192DG
Avnet Americas 638nm / 700mW AlGaInP Laser Diode - Trays (Alt: HL63192DG) RoHS: Compliant Min Qty: 24 Package Multiple: 1 Lead time: 12 Weeks, 6 Days Container: Tray 0
  • 24 $65.6250
  • 30 $64.2600
  • 50 $62.5800
  • 120 $50.8218
  • 240 $49.3902
  • 1,200 $42.2100
  • 2,400 $40.9500
$40.9500 / $65.6250 Buy Now

Part Details for HL63192DG

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HL63192DG Part Data Attributes:

HL63192DG Ushio Opto Semiconductors Inc
Buy Now Datasheet
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HL63192DG Ushio Opto Semiconductors Inc Laser Diode,
Part Life Cycle Code Active
Ihs Manufacturer USHIO OPTO SEMICONDUCTORS INC
Reach Compliance Code unknown
Factory Lead Time 12 Weeks, 6 Days
Configuration SINGLE WITH BUILT-IN PHOTO DIODE
Forward Current-Max 1.3 A
Mounting Feature RADIAL MOUNT
Number of Functions 1
Operating Temperature-Max 40 °C
Operating Temperature-Min -10 °C
Optoelectronic Device Type LASER DIODE
Output Power-Nom 550 mW
Peak Wavelength 638 nm
Semiconductor Material AlGaInP
Shape ROUND
Size 1.6 mm
Surface Mount NO
Threshold Current-Max 250 mA

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