Datasheets
HUF75321D3ST by:

N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL

Part Details for HUF75321D3ST by onsemi

Overview of HUF75321D3ST by onsemi

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Price & Stock for HUF75321D3ST

Part # Distributor Description Stock Price Buy
DISTI # 05B7192
Newark Transistor, mosfet, n-Channel,55V V(Br)Dss,20A I(D),to-252Aa Rohs Compliant: Yes |Onsemi HUF75321D3ST Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4720
  • 3,000 $0.4530
  • 6,000 $0.4110
  • 12,000 $0.3700
  • 18,000 $0.3570
  • 30,000 $0.3480
$0.3480 / $0.4720 Buy Now
DISTI # HUF75321D3STCT-ND
DigiKey MOSFET N-CH 55V 20A TO252AA Min Qty: 1 Lead time: 31 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5440
In Stock
  • 1 $0.9100
  • 10 $0.7470
  • 100 $0.5812
  • 500 $0.4926
  • 1,000 $0.4013
  • 2,500 $0.3777
  • 5,000 $0.3598
  • 12,500 $0.3432
  • 25,000 $0.3425
$0.3425 / $0.9100 Buy Now
DISTI # 512-HUF75321D3ST
Mouser Electronics MOSFET 20a 55V N-Channel UltraFET RoHS: Compliant 2544
  • 1 $0.8100
  • 10 $0.6690
  • 100 $0.5340
  • 500 $0.4640
  • 1,000 $0.3950
  • 2,500 $0.3920
$0.3920 / $0.8100 Buy Now
DISTI # P40:2555_23189076
Arrow Electronics Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Date Code: 2312 Europe - 112500
  • 1 $0.6663
  • 10 $0.5724
  • 100 $0.4761
  • 500 $0.4310
  • 1,000 $0.3657
  • 2,500 $0.3355
$0.3355 / $0.6663 Buy Now
DISTI # E02:0323_00841662
Arrow Electronics Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 31 Weeks Date Code: 2319 Europe - 37500
  • 2,500 $0.3493
  • 5,000 $0.3386
  • 12,500 $0.3342
$0.3342 / $0.3493 Buy Now
DISTI # V72:2272_06301355
Arrow Electronics Trans MOSFET N-CH Si 55V 20A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 31 Weeks Date Code: 2319 Container: Cut Strips Americas - 2250
  • 1 $0.4571
  • 10 $0.4278
  • 25 $0.4262
  • 100 $0.3893
  • 250 $0.3862
  • 500 $0.3673
  • 1,000 $0.3514
$0.3514 / $0.4571 Buy Now
Future Electronics N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3700
  • 5,000 $0.3600
  • 7,500 $0.3600
  • 10,000 $0.3550
  • 12,500 $0.3450
$0.3450 / $0.3700 Buy Now
Future Electronics N-Channel 55 V 0.036 Ohm UltraFET Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3700
  • 5,000 $0.3600
  • 7,500 $0.3600
  • 10,000 $0.3550
  • 12,500 $0.3450
$0.3450 / $0.3700 Buy Now
Rochester Electronics HUF75321D3 - Power Field-Effect Transistor, 20A, 55V, 0.036ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 11964
  • 1 $0.3996
  • 25 $0.3916
  • 100 $0.3756
  • 500 $0.3596
  • 1,000 $0.3397
$0.3397 / $0.3996 Buy Now
DISTI # HUF75321D3ST
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3400
$0.3400 Buy Now
DISTI # HUF75321D3ST
Avnet Silica Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 32 Weeks, 0 Days Silica - 0
Buy Now
DISTI # HUF75321D3ST
EBV Elektronik Trans MOSFET N-CH 55V 20A 3-Pin(2+Tab) TO-252AA T/R (Alt: HUF75321D3ST) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 33 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock 5000
RFQ

Part Details for HUF75321D3ST

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HUF75321D3ST Part Data Attributes:

HUF75321D3ST onsemi
Buy Now Datasheet
Compare Parts:
HUF75321D3ST onsemi N-Channel UltraFET Power MOSFET 55V, 20A, 36mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description TO-252AA, 3 PIN
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 93 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75321D3ST

This table gives cross-reference parts and alternative options found for HUF75321D3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75321D3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75321D3S_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3S_NL
HUF75321D3ST_NL Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3ST_NL
STD30NE06 30A, 60V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, DPAK-3 STMicroelectronics HUF75321D3ST vs STD30NE06
HUF75321D3S 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC HUF75321D3ST vs HUF75321D3S
HUF75321D3ST 20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC HUF75321D3ST vs HUF75321D3ST
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75321D3ST vs HUF75321D3S
HUF75321D3ST Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation HUF75321D3ST vs HUF75321D3ST
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens HUF75321D3ST vs BUZ71L
MTD2N40E-T4 Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products HUF75321D3ST vs MTD2N40E-T4
HUF75321D3S Power Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor HUF75321D3ST vs HUF75321D3S
2SK2412 20A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN Renesas Electronics Corporation HUF75321D3ST vs 2SK2412
IRFZ24N Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HUF75321D3ST vs IRFZ24N
BUK7575-55A Power Field-Effect Transistor Nexperia HUF75321D3ST vs BUK7575-55A
PHB20N06T,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia HUF75321D3ST vs PHB20N06T,118
MTD2N40E-T4 2A, 400V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC HUF75321D3ST vs MTD2N40E-T4
MTD3055ET4 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC HUF75321D3ST vs MTD3055ET4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor HUF75321D3ST vs BUZ71

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