Datasheets
HUF75617D3 by:

16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for HUF75617D3 by Rochester Electronics LLC

Overview of HUF75617D3 by Rochester Electronics LLC

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Part Details for HUF75617D3

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HUF75617D3 Part Data Attributes:

HUF75617D3 Rochester Electronics LLC
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HUF75617D3 Rochester Electronics LLC 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF75617D3

This table gives cross-reference parts and alternative options found for HUF75617D3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75617D3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75617D3 Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation HUF75617D3 vs HUF75617D3
HUF75617D3 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75617D3 vs HUF75617D3
Part Number Description Manufacturer Compare
FQU19N10TU Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation HUF75617D3 vs FQU19N10TU
HUF75617D3 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation HUF75617D3 vs HUF75617D3
FQU19N10 Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation HUF75617D3 vs FQU19N10
HUF75617D3 Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation HUF75617D3 vs HUF75617D3

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