Part Details for HUF75645S3S by Fairchild Semiconductor Corporation
Overview of HUF75645S3S by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for HUF75645S3S
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 75A, 100V, 0.014ohm, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 375 |
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$0.8123 / $0.9556 | Buy Now |
Part Details for HUF75645S3S
HUF75645S3S CAD Models
HUF75645S3S Part Data Attributes
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HUF75645S3S
Fairchild Semiconductor Corporation
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Datasheet
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HUF75645S3S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 310 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for HUF75645S3S
This table gives cross-reference parts and alternative options found for HUF75645S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF75645S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75645S3ST | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | HUF75645S3S vs HUF75645S3ST |
HUF75645S3S_NL | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | HUF75645S3S vs HUF75645S3S_NL |
HUF75645S3ST | N-Channel UltraFET Power MOSFET 100V, 75A, 14mΩ, 800-REEL | onsemi | HUF75645S3S vs HUF75645S3ST |
HUF75645S3S | 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | HUF75645S3S vs HUF75645S3S |
HUF75645S3ST | 75A, 100V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | HUF75645S3S vs HUF75645S3ST |
HUF75645S3ST_NL | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Fairchild Semiconductor Corporation | HUF75645S3S vs HUF75645S3ST_NL |