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1 - 10 of 10 results
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HUF75645S3ST
onsemi
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$2.4368 | Yes | End Of Life | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 245 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ONSEMI | 418AJ | not_compliant | EAR99 | onsemi | |||||||
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HUF75645S3ST
Intersil Corporation
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | SINGLE | INTERSIL CORP | not_compliant | EAR99 | ||||||||||||
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HUF75645S3S_NL
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | not_compliant | EAR99 | |||||||||||
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HUF75645S3S
Rochester Electronics LLC
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NOT SPECIFIED | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | |||||||||||||
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HUF75645S3ST
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | |||||||||||
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HUF75645S3ST_NL
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | not_compliant | EAR99 | ||||||||||
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HUF75645S3ST_NL
Rochester Electronics LLC
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | unknown | ||||||||||||
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HUF75645S3S
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | not_compliant | EAR99 | 8541.29.00.95 | |||||||||
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HUF75645S3S
Intersil Corporation
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin/Lead (Sn/Pb) | GULL WING | SINGLE | INTERSIL CORP | not_compliant | EAR99 | ||||||||||||
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HUF75645S3ST
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 75 A | 14 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 310 W | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | 2LD,TO263, SURFACE MOUNT | not_compliant | EAR99 | 8541.29.00.95 | D2PAK | 2 |