Datasheets
IGC99T120T8RLX1SA3 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-5

Part Details for IGC99T120T8RLX1SA3 by Infineon Technologies AG

Overview of IGC99T120T8RLX1SA3 by Infineon Technologies AG

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Price & Stock for IGC99T120T8RLX1SA3

Part # Distributor Description Stock Price Buy
DISTI # 448-IGC99T120T8RLX1SA3-ND
DigiKey IGBT 1200V 100A DIE Lead time: 20 Weeks Container: Bulk Temporarily Out of Stock
Buy Now
DISTI # IGC99T120T8RLX1SA3
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T8RLX1SA3) RoHS: Compliant Min Qty: 2322 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack 0
  • 2,322 $15.6222
  • 2,400 $15.1488
  • 4,700 $14.6754
  • 12,000 $14.2020
  • 24,000 $13.7286
  • 120,000 $13.2552
  • 240,000 $12.7818
$12.7818 / $15.6222 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2322 Package Multiple: 1 0
  • 2,322 $13.3400
$13.3400 Buy Now
DISTI # IGC99T120T8RLX1SA3
Avnet Americas IGBT CHIPS - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T8RLX1SA3) RoHS: Compliant Min Qty: 2322 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Waffle Pack 0
  • 2,322 $15.6222
  • 2,400 $15.1488
  • 4,700 $14.6754
  • 12,000 $14.2020
  • 24,000 $13.7286
  • 120,000 $13.2552
  • 240,000 $12.7818
$12.7818 / $15.6222 Buy Now
DISTI # SP000945514
EBV Elektronik IGBT CHIPS (Alt: SP000945514) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IGC99T120T8RLX1SA3

IGC99T120T8RLX1SA3 CAD Models

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IGC99T120T8RLX1SA3 Part Data Attributes:

IGC99T120T8RLX1SA3 Infineon Technologies AG
Buy Now Datasheet
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IGC99T120T8RLX1SA3 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-5
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description UNCASED CHIP, R-XUUC-N5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUUC-N5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
VCEsat-Max 1.97 V

Alternate Parts for IGC99T120T8RLX1SA3

This table gives cross-reference parts and alternative options found for IGC99T120T8RLX1SA3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IGC99T120T8RLX1SA3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SP000945514 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGC99T120T8RLX1SA3 vs SP000945514
IGC99T120T8RL Insulated Gate Bipolar Transistor Infineon Technologies AG IGC99T120T8RLX1SA3 vs IGC99T120T8RL
Part Number Description Manufacturer Compare
IRGC100B120UB Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 Infineon Technologies AG IGC99T120T8RLX1SA3 vs IRGC100B120UB
IGC99T120T8RL Insulated Gate Bipolar Transistor Infineon Technologies AG IGC99T120T8RLX1SA3 vs IGC99T120T8RL
SP000945514 Insulated Gate Bipolar Transistor, Infineon Technologies AG IGC99T120T8RLX1SA3 vs SP000945514
IRGC100B120KBPBF Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 International Rectifier IGC99T120T8RLX1SA3 vs IRGC100B120KBPBF
IGC99T120T8RQ Insulated Gate Bipolar Transistor Infineon Technologies AG IGC99T120T8RLX1SA3 vs IGC99T120T8RQ
IRGC100B120KB Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, DIE-2 International Rectifier IGC99T120T8RLX1SA3 vs IRGC100B120KB

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