Part Details for IKW50N65ES5XKSA1 by Infineon Technologies AG
Overview of IKW50N65ES5XKSA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IKW50N65ES5XKSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
12AC9677
|
Newark | Igbt, Single, 650V, 80A, To-247, Dc Collector Current:80A, Collector Emitter Saturation Voltage Vce(On):1.35V, Power Dissipation Pd:274W, Collector Emitter Voltage V(Br)Ceo:650V, Transistor Case Style:To-247, No. Of Pins:3Pins, Rohs Compliant: Yes |Infineon IKW50N65ES5XKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 198 |
|
$3.8500 / $6.9600 | Buy Now |
DISTI #
448-IKW50N65ES5XKSA1-ND
|
DigiKey | IGBT TRENCH 650V 80A TO247-3 Min Qty: 1 Lead time: 12 Weeks Container: Tube | Temporarily Out of Stock |
|
$2.8386 / $5.8300 | Buy Now |
DISTI #
IKW50N65ES5XKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 - Rail/Tube (Alt: IKW50N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$3.3770 | Buy Now |
DISTI #
726-IKW50N65ES5XKSA1
|
Mouser Electronics | IGBT Transistors INDUSTRY 14 RoHS: Compliant | 0 |
|
$3.3300 / $6.0800 | Order Now |
|
Future Electronics | IKW50N65ES5 Series 650 V 80 A Through Hole IGBT TrenchStop™ - PG-TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
|
$2.9600 / $3.2800 | Buy Now |
DISTI #
IKW50N65ES5XKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 - Rail/Tube (Alt: IKW50N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$3.3770 | Buy Now |
DISTI #
IKW50N65ES5XKSA1
|
TME | Transistor: IGBT, 650V, 60.5A, 137W, TO247-3 Min Qty: 1 | 0 |
|
$3.3800 / $4.7400 | RFQ |
|
Ameya Holding Limited | IGBT TRENCH 650V 80A TO247-3 | 507 |
|
RFQ | |
DISTI #
IKW50N65ES5XKSA1
|
Avnet Americas | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 - Rail/Tube (Alt: IKW50N65ES5XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
|
$3.3770 | Buy Now |
DISTI #
SP001319682
|
EBV Elektronik | Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 (Alt: SP001319682) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 1 Weeks, 6 Days | EBV - 0 |
|
Buy Now |
Part Details for IKW50N65ES5XKSA1
IKW50N65ES5XKSA1 CAD Models
IKW50N65ES5XKSA1 Part Data Attributes
|
IKW50N65ES5XKSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IKW50N65ES5XKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247,
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 80 A | |
Collector-Emitter Voltage-Max | 650 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 4.8 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 274 W | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 198 ns | |
Turn-on Time-Nom (ton) | 45 ns | |
VCEsat-Max | 1.7 V |
Alternate Parts for IKW50N65ES5XKSA1
This table gives cross-reference parts and alternative options found for IKW50N65ES5XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IKW50N65ES5XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IKW50N65ES5 | Insulated Gate Bipolar Transistor, | Infineon Technologies AG | IKW50N65ES5XKSA1 vs IKW50N65ES5 |