Part Details for IPB015N08N5 by Infineon Technologies AG
Overview of IPB015N08N5 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB015N08N5
IPB015N08N5 CAD Models
IPB015N08N5 Part Data Attributes
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IPB015N08N5
Infineon Technologies AG
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Datasheet
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IPB015N08N5
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 80V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-7/6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 180 A | |
Drain-source On Resistance-Max | 0.0015 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 720 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB015N08N5
This table gives cross-reference parts and alternative options found for IPB015N08N5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB015N08N5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUK6C3R3-75C | Power Field-Effect Transistor | Nexperia | IPB015N08N5 vs BUK6C3R3-75C |
STH240N75F3-2 | N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package | STMicroelectronics | IPB015N08N5 vs STH240N75F3-2 |
BUK6C3R3-75C,118 | BUK6C3R3-75C - N-channel TrenchMOS intermediate level FET@en-us D2PAK 7-Pin | Nexperia | IPB015N08N5 vs BUK6C3R3-75C,118 |