Datasheets
IPB033N10N5LFATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2

Part Details for IPB033N10N5LFATMA1 by Infineon Technologies AG

Overview of IPB033N10N5LFATMA1 by Infineon Technologies AG

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Price & Stock for IPB033N10N5LFATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPB033N10N5LFATMA1CT-ND
DigiKey MOSFET N-CH 100V 120A TO263-3 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 447
In Stock
  • 1 $6.6300
  • 10 $5.5660
  • 100 $4.5028
  • 500 $4.0025
  • 1,000 $3.4270
  • 2,000 $3.2269
$3.2269 / $6.6300 Buy Now
DISTI # IPB033N10N5LFATMA1
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB033N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 5000
  • 1,000 $4.0866
  • 2,000 $3.9627
  • 4,000 $3.8389
  • 6,000 $3.7151
  • 8,000 $3.5912
  • 10,000 $3.4674
  • 100,000 $3.3436
$3.3436 / $4.0866 Buy Now
DISTI # 93AC7099
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 93AC7099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack 504 Partner Stock
  • 1 $7.4500
  • 10 $6.3500
  • 25 $5.9800
  • 50 $5.6100
  • 100 $5.2400
$5.2400 / $7.4500 Buy Now
DISTI # 726-IPB033N10N5LFATM
Mouser Electronics MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant 5763
  • 1 $6.5900
  • 10 $5.5200
  • 25 $5.4300
  • 100 $4.4300
  • 250 $4.4000
  • 500 $3.4300
  • 1,000 $3.3700
  • 2,000 $3.2900
$3.2900 / $6.5900 Buy Now
Future Electronics OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $3.3100
$3.3100 Buy Now
Future Electronics OptiMOS 5 RoHS: Non Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $3.3100
$3.3100 Buy Now
DISTI # IPB033N10N5LFATMA1
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB033N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 5000
  • 1,000 $4.0866
  • 2,000 $3.9627
  • 4,000 $3.8389
  • 6,000 $3.7151
  • 8,000 $3.5912
  • 10,000 $3.4674
  • 100,000 $3.3436
$3.3436 / $4.0866 Buy Now
DISTI # 93AC7099
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 93AC7099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack 504 Partner Stock
  • 1 $7.4500
  • 10 $6.3500
  • 25 $5.9800
  • 50 $5.6100
  • 100 $5.2400
$5.2400 / $7.4500 Buy Now
Ameya Holding Limited   Min Qty: 250 2964
  • 250 $6.5400
  • 500 $6.3436
$6.3436 / $6.5400 Buy Now
DISTI # IPB033N10N5LFATMA1
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB033N10N5LFATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 5000
  • 1,000 $4.0866
  • 2,000 $3.9627
  • 4,000 $3.8389
  • 6,000 $3.7151
  • 8,000 $3.5912
  • 10,000 $3.4674
  • 100,000 $3.3436
$3.3436 / $4.0866 Buy Now
DISTI # 93AC7099
Avnet Americas Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 93AC7099) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack 504 Partner Stock
  • 1 $7.4500
  • 10 $6.3500
  • 25 $5.9800
  • 50 $5.6100
  • 100 $5.2400
$5.2400 / $7.4500 Buy Now
DISTI # SP001503858
EBV Elektronik Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001503858) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IPB033N10N5LFATMA1

IPB033N10N5LFATMA1 CAD Models

IPB033N10N5LFATMA1 Part Data Attributes

IPB033N10N5LFATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB033N10N5LFATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 100V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks, 1 Day
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 273 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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