Part Details for IPB100N06S205ATMA4 by Infineon Technologies AG
Overview of IPB100N06S205ATMA4 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IPB100N06S205ATMA4
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IPB100N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 55414 |
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$1.8600 / $2.1800 | Buy Now |
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DISTI #
IPB100N06S205
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TME | Transistor: N-MOSFET, unipolar, 55V, 100A, 300W, PG-TO263-3 Min Qty: 1 | 0 |
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$1.5500 / $2.1700 | RFQ |
Part Details for IPB100N06S205ATMA4
IPB100N06S205ATMA4 CAD Models
IPB100N06S205ATMA4 Part Data Attributes
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IPB100N06S205ATMA4
Infineon Technologies AG
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Datasheet
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IPB100N06S205ATMA4
Infineon Technologies AG
Power Field-Effect Transistor, 100A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0047 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB100N06S205ATMA4
This table gives cross-reference parts and alternative options found for IPB100N06S205ATMA4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB100N06S205ATMA4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPD90N06S4L05ATMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IPB100N06S205ATMA4 vs IPD90N06S4L05ATMA1 |
| NP89N055PUK-E1-AY | Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPB100N06S205ATMA4 vs NP89N055PUK-E1-AY |
| NP89N055PUK-E2-AY | Nch Single Power MOSFET 55V 90A 4.0mohm MP-25ZP/TO-263 Automotive, MP-25ZP, /Embossed Tape | Renesas Electronics Corporation | IPB100N06S205ATMA4 vs NP89N055PUK-E2-AY |
| IPB048N06LGATMA1 | Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB100N06S205ATMA4 vs IPB048N06LGATMA1 |
| 934069893115 | Power Field-Effect Transistor, 100A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | Nexperia | IPB100N06S205ATMA4 vs 934069893115 |
| PSMN4R0-60YS,115 | PSMN4R0-60YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FET@en-us SOIC 4-Pin | Nexperia | IPB100N06S205ATMA4 vs PSMN4R0-60YS,115 |
| PSMN4R1-60YLX | PSMN4R1-60YL - N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin | Nexperia | IPB100N06S205ATMA4 vs PSMN4R1-60YLX |
| IPD048N06L3GBTMA1 | Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB100N06S205ATMA4 vs IPD048N06L3GBTMA1 |
| IPD048N06L3G | Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IPB100N06S205ATMA4 vs IPD048N06L3G |
| IPB048N06LG | Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB100N06S205ATMA4 vs IPB048N06LG |