Part Details for IPB120N04S4L02ATMA1 by Infineon Technologies AG
Overview of IPB120N04S4L02ATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB120N04S4L02ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB120N04S4L02ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 120A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
969 In Stock |
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$1.4175 / $3.0400 | Buy Now |
DISTI #
IPB120N04S4L02ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S4L02ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.7577 | Buy Now |
DISTI #
726-IPB120N04S4L02AT
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Mouser Electronics | MOSFET N-CHANNEL 30/40V RoHS: Compliant | 190 |
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$1.4100 / $3.0400 | Buy Now |
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Rochester Electronics | IPB120N04 - OPTIMOS-T2 POWER-TRANSISTOR RoHS: Compliant Status: Active Min Qty: 1 | 2826 |
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$1.4100 / $1.6500 | Buy Now |
DISTI #
IPB120N04S4L02ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S4L02ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.7577 | Buy Now |
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Ameya Holding Limited | 95 |
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RFQ | ||
DISTI #
IPB120N04S4L02ATMA1
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N04S4L02ATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.7577 | Buy Now |
Part Details for IPB120N04S4L02ATMA1
IPB120N04S4L02ATMA1 CAD Models
IPB120N04S4L02ATMA1 Part Data Attributes
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IPB120N04S4L02ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB120N04S4L02ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 480 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 480 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for IPB120N04S4L02ATMA1
This table gives cross-reference parts and alternative options found for IPB120N04S4L02ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB120N04S4L02ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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934066498118 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | IPB120N04S4L02ATMA1 vs 934066498118 |
BUK961R7-40E,118 | N-channel TrenchMOS logic level FET D2PAK 3-Pin | NXP Semiconductors | IPB120N04S4L02ATMA1 vs BUK961R7-40E,118 |
IPB015N04LGXT | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120N04S4L02ATMA1 vs IPB015N04LGXT |
934066521127 | 120A, 40V, 0.00184ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IPB120N04S4L02ATMA1 vs 934066521127 |
BUK951R9-40E,127 | N-channel TrenchMOS logic level FET TO-220 3-Pin | NXP Semiconductors | IPB120N04S4L02ATMA1 vs BUK951R9-40E,127 |
IPB120N04S4L-02 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3/2 PIN | Infineon Technologies AG | IPB120N04S4L02ATMA1 vs IPB120N04S4L-02 |
IPB015N04LGATMA1 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120N04S4L02ATMA1 vs IPB015N04LGATMA1 |
IPB015N04LG | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB120N04S4L02ATMA1 vs IPB015N04LG |