Part Details for IPB160N04S4LH1ATMA1 by Infineon Technologies AG
Overview of IPB160N04S4LH1ATMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Automotive
Price & Stock for IPB160N04S4LH1ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
448-IPB160N04S4LH1ATMA1CT-ND
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DigiKey | MOSFET N-CH 40V 160A TO263-7 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1895 In Stock |
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$1.4700 / $3.1500 | Buy Now |
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DISTI #
726-IPB160N04S4LH1AT
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Mouser Electronics | MOSFET N-CHANNEL 30/40V RoHS: Compliant | 873 |
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$1.4200 / $3.0000 | Buy Now |
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Rochester Electronics | IPB160N04S - OptiMOS T2, 40V Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 5870 |
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$1.4600 / $1.7200 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH TO263-7 | 436 |
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RFQ | |
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DISTI #
SP000979640
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EBV Elektronik | Trans MOSFET N-CH 40V 160A 7-Pin TO-263 T/R (Alt: SP000979640) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
Part Details for IPB160N04S4LH1ATMA1
IPB160N04S4LH1ATMA1 CAD Models
IPB160N04S4LH1ATMA1 Part Data Attributes
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IPB160N04S4LH1ATMA1
Infineon Technologies AG
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Datasheet
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IPB160N04S4LH1ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 640 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB160N04S4LH1ATMA1
This table gives cross-reference parts and alternative options found for IPB160N04S4LH1ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB160N04S4LH1ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB160N04S4L-H1 | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, | Infineon Technologies AG | IPB160N04S4LH1ATMA1 vs IPB160N04S4L-H1 |