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Transistors / Power Field-Effect Transistors / IPB60R190C6
Datasheets
IPB60R190C6 by:

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

Part Details for IPB60R190C6 by Infineon Technologies AG

Overview of IPB60R190C6 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for IPB60R190C6

Part # Distributor Description Stock Price Buy
DISTI # 726-IPB60R190C6
Mouser Electronics MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant 1018
  • 1 $3.2400
  • 10 $2.7200
  • 25 $2.5700
  • 100 $2.2000
  • 250 $2.0800
  • 500 $1.9600
  • 1,000 $1.6700
  • 2,000 $1.5800
  • 5,000 $1.5100
$1.5100 / $3.2400 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 20.2A I(D), 600V, 0.19OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 92
  • 1 $3.3975
  • 4 $2.2650
  • 12 $1.6988
$1.6988 / $3.3975 Buy Now
Chip1Cloud MOSFET N-CH 600V 20.2A TO263 / Trans MOSFET N-CH 650V 20.2A 3-Pin(2+Tab) D2PAK T/R 179988
RFQ
LCSC 600V 20.2A 151W 190m10V9.5A 3.5V630uA 1PCSNChannel TO-263 MOSFETs ROHS 85
  • 1 $3.1319
  • 10 $2.7111
  • 30 $2.4604
  • 100 $2.1098
  • 500 $1.9934
  • 1,000 $1.9397
$1.9397 / $3.1319 Buy Now

Part Details for IPB60R190C6

IPB60R190C6 CAD Models

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IPB60R190C6 Part Data Attributes:

Parametric Data
IPB60R190C6 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPB60R190C6 Infineon Technologies AG Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 418 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.2 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 151 W
Pulsed Drain Current-Max (IDM) 59 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB60R190C6

This table gives cross-reference parts and alternative options found for IPB60R190C6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R190C6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments IPB60R190C6 vs NDB706AL
IRFS620 Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IPB60R190C6 vs IRFS620
FQA30N40 Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Fairchild Semiconductor Corporation IPB60R190C6 vs FQA30N40
IPD90N06S306ATMA1 Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN Infineon Technologies AG IPB60R190C6 vs IPD90N06S306ATMA1
STP4NK60Z N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package STMicroelectronics IPB60R190C6 vs STP4NK60Z
SPB80N06S2-07 Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB60R190C6 vs SPB80N06S2-07
IXFH30N40Q Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Littelfuse Inc IPB60R190C6 vs IXFH30N40Q
SSH60N08 Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IPB60R190C6 vs SSH60N08
NDP605BE TRANSISTOR 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power National Semiconductor Corporation IPB60R190C6 vs NDP605BE
STW29NK50Z 31A, 500V, 0.13ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics IPB60R190C6 vs STW29NK50Z

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