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Transistors / Power Field-Effect Transistors / IPD50N06S4L08ATMA2
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IPD50N06S4L08ATMA2 by: Infineon Technologies AG

Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN

Part Details for IPD50N06S4L08ATMA2 by Infineon Technologies AG

Overview of IPD50N06S4L08ATMA2 by Infineon Technologies AG

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Price & Stock for IPD50N06S4L08ATMA2

Part # Distributor Description Stock Price Buy
DISTI # 39AH8907
Newark Mosfet, Aec-Q101, N-Ch, 60V, 50A, 71W Rohs Compliant: Yes |Infineon IPD50N06S4L08ATMA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.3400
  • 10 $1.1000
  • 25 $1.0200
  • 50 $0.9410
  • 100 $0.8610
  • 250 $0.7960
  • 500 $0.7300
  • 1,000 $0.5940
$0.5940 / $1.3400 Buy Now
DISTI # 448-IPD50N06S4L08ATMA2CT-ND
DigiKey MOSFET N-CH 60V 50A TO252-31 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 7328
In Stock
  • 1 $1.3000
  • 10 $1.0650
  • 100 $0.8285
  • 500 $0.7022
  • 1,000 $0.5720
  • 2,500 $0.4883
$0.4883 / $1.3000 Buy Now
DISTI # IPD50N06S4L08ATMA2
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6054
$0.6054 Buy Now
DISTI # 726-IPD50N06S4L08ATM
Mouser Electronics MOSFET MOSFET RoHS: Compliant 8071
  • 1 $1.3000
  • 10 $1.0700
  • 100 $0.8280
  • 500 $0.7020
  • 1,000 $0.5710
  • 2,500 $0.4880
$0.4880 / $1.3000 Buy Now
Future Electronics IPD50N06S4L08 Series 60 V 50 A 7.8 mOhm Single N-Channel MOSFET - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.5050
  • 5,000 $0.4950
  • 7,500 $0.4900
  • 10,000 $0.4800
$0.4800 / $0.5050 Buy Now
Rochester Electronics IPD50N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Active Min Qty: 1 76498
  • 1 $0.5696
  • 25 $0.5582
  • 100 $0.5354
  • 500 $0.5126
  • 1,000 $0.4842
$0.4842 / $0.5696 Buy Now
DISTI # IPD50N06S4L08ATMA2
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6054
$0.6054 Buy Now
Ameya Holding Limited PG-TO252-3/N-CHANNEL_55/60V Power MOS FET 4035
RFQ
DISTI # IPD50N06S4L08ATMA2
Avnet Americas Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD50N06S4L08ATMA2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.6054
$0.6054 Buy Now
Chip 1 Exchange INSTOCK 30000
RFQ
CHIPMALL.COM LIMITED Simulation/SPICE-Model 918
  • 1 $0.6628
$0.6628 Buy Now
DISTI # SP001028664
EBV Elektronik Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R (Alt: SP001028664) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 3155112
element14 Asia-Pacific MOSFET, AEC-Q101, N-CH, 60V, 50A, 71W RoHS: Compliant Min Qty: 1 Container: Cut Tape 3987
  • 1 $1.3476
  • 10 $1.1132
  • 100 $0.8642
  • 500 $0.7324
  • 1,000 $0.5632
  • 5,000 $0.5361
$0.5361 / $1.3476 Buy Now
DISTI # 3155112RL
element14 Asia-Pacific MOSFET, AEC-Q101, N-CH, 60V, 50A, 71W RoHS: Compliant Min Qty: 100 Container: Reel 3987
  • 100 $0.8642
  • 500 $0.7324
  • 1,000 $0.5632
  • 5,000 $0.5361
$0.5361 / $0.8642 Buy Now
DISTI # 3155112RL
Farnell MOSFET, AEC-Q101, N-CH, 60V, 50A, 71W RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 100 $0.8269
  • 500 $0.7020
  • 1,000 $0.5371
  • 5,000 $0.5109
$0.5109 / $0.8269 Buy Now
DISTI # 3155112
Farnell MOSFET, AEC-Q101, N-CH, 60V, 50A, 71W RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Cut Tape 0
  • 1 $1.4614
  • 10 $1.1279
  • 100 $0.8269
  • 500 $0.7020
  • 1,000 $0.5371
  • 5,000 $0.5109
$0.5109 / $1.4614 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.6357
  • 5,000 $0.5933
$0.5933 / $0.6357 Buy Now
Win Source Electronics MOSFET N-CH 60V 50A TO252-31 / N-Channel 60 V 50A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11 64980
  • 12 $4.2400
  • 29 $3.4790
  • 45 $3.3700
  • 62 $3.2610
  • 80 $3.1530
  • 107 $2.8270
$2.8270 / $4.2400 Buy Now

Part Details for IPD50N06S4L08ATMA2

IPD50N06S4L08ATMA2 CAD Models

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IPD50N06S4L08ATMA2 Part Data Attributes

Parametric Data
IPD50N06S4L08ATMA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD50N06S4L08ATMA2 Infineon Technologies AG Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 87 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD50N06S4L08ATMA2

This table gives cross-reference parts and alternative options found for IPD50N06S4L08ATMA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD50N06S4L08ATMA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD50N06S4L-08 50A, 60V, 0.0078ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, GREEN, PLASTIC PACKAGE-3 Rochester Electronics LLC IPD50N06S4L08ATMA2 vs IPD50N06S4L-08
IPD50N06S4L08ATMA1 Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD50N06S4L08ATMA2 vs IPD50N06S4L08ATMA1
IPD50N06S4L-08 Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD50N06S4L08ATMA2 vs IPD50N06S4L-08
Part Number Description Manufacturer Compare
IPD50N06S4L-08 Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPD50N06S4L08ATMA2 vs IPD50N06S4L-08
IPD50N06S4L08ATMA1 Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPD50N06S4L08ATMA2 vs IPD50N06S4L08ATMA1
SUD50N06-08H-E3 TRANSISTOR 50 A, 60 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, LEAD FREE PACKAGE-3, FET General Purpose Power Vishay Siliconix IPD50N06S4L08ATMA2 vs SUD50N06-08H-E3

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