Parametric results for: IPD50N06S4L08ATMA2 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

87.0 mJ 1

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DRAIN 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

60 V 1

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Drain Current-Max (ID) (1)

50 A 1

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Drain-source On Resistance-Max (1)

7.8 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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TO-252 1

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R-PSSO-G2 1

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e3 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

2 1

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ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

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Yes 1

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260 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

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