Datasheets
IPD70N10S3L12ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

Part Details for IPD70N10S3L12ATMA1 by Infineon Technologies AG

Overview of IPD70N10S3L12ATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IPD70N10S3L12ATMA1

Part # Distributor Description Stock Price Buy
DISTI # IPD70N10S3L12ATMA1CT-ND
DigiKey MOSFET N-CH 100V 70A TO252-3 Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4739
In Stock
  • 1 $2.3900
  • 10 $1.9880
  • 100 $1.5821
  • 500 $1.3387
  • 1,000 $1.1359
  • 2,500 $1.0791
  • 5,000 $1.0385
$1.0385 / $2.3900 Buy Now
Future Electronics Single N-Channel 100 V 11.5 mOhm 77 nC CoolMOS™ Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 12500
Reel
  • 2,500 $1.0600
$1.0600 Buy Now
Rochester Electronics IPD70N10S3L-12 - MOSFET_(75V,120V( RoHS: Compliant Status: Active Min Qty: 1 1500
  • 1 $1.1700
  • 25 $1.1500
  • 100 $1.1000
  • 500 $1.0500
  • 1,000 $0.9958
$0.9958 / $1.1700 Buy Now
Ameya Holding Limited MOSFET N-CH 100V 70A TO252-3 6424
RFQ
CHIPMALL.COM LIMITED   288
  • 1 $1.4078
$1.4078 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 10000
  • 2,500 $1.5100
  • 10,000 $1.4100
$1.4100 / $1.5100 Buy Now
Win Source Electronics MOSFET N-CH 100V 70A TO252-3 222488
  • 18 $2.8260
  • 44 $2.3190
  • 67 $2.2470
  • 92 $2.1740
  • 119 $2.1020
  • 160 $1.8840
$1.8840 / $2.8260 Buy Now

Part Details for IPD70N10S3L12ATMA1

IPD70N10S3L12ATMA1 CAD Models

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IPD70N10S3L12ATMA1 Part Data Attributes

IPD70N10S3L12ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPD70N10S3L12ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 70A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 410 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.0152 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 135 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 280 A
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for IPD70N10S3L12ATMA1

This table gives cross-reference parts and alternative options found for IPD70N10S3L12ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPD70N10S3L12ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SP000261250 70A, 100V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, Infineon Technologies AG IPD70N10S3L12ATMA1 vs SP000261250
Part Number Description Manufacturer Compare
SP000261250 70A, 100V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, Infineon Technologies AG IPD70N10S3L12ATMA1 vs SP000261250
LTP60N10 Power Field-Effect Transistor, 60A I(D), 100V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Lite-On Semiconductor Corporation IPD70N10S3L12ATMA1 vs LTP60N10
STI70N10F4 65A, 100V, 0.0165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics IPD70N10S3L12ATMA1 vs STI70N10F4

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