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IPD70N10S3L12ATMA1
Infineon Technologies AG
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$1.4802 | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 100 V | 1 | 70 A | 15.2 mΩ | 410 mJ | 135 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 125 W | 280 A | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101; IEC-68-1 | 1 | 175 °C | -55 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G2 | not_compliant | EAR99 | Infineon |