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Transistors / Small Signal Field-Effect Transistors / IPN60R3K4CEATMA1
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IPN60R3K4CEATMA1 by:

Small Signal Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IPN60R3K4CEATMA1 by Infineon Technologies AG

Overview of IPN60R3K4CEATMA1 by Infineon Technologies AG

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Price & Stock for IPN60R3K4CEATMA1

Part # Distributor Description Stock Price Buy
DISTI # 97Y1835
Newark Mosfet, N-Ch, 600V, 2.6A, Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:2.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPN60R3K4CEATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 6326
  • 1 $0.5360
  • 10 $0.4590
  • 25 $0.4140
  • 50 $0.3700
  • 100 $0.3260
  • 250 $0.2930
  • 500 $0.2600
  • 1,000 $0.2160
$0.2160 / $0.5360 Buy Now
DISTI # 86AK5260
Newark Mosfet, N-Ch, 600V, 2.6A, Sot-223 Rohs Compliant: Yes |Infineon IPN60R3K4CEATMA1 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.1650
  • 6,000 $0.1610
  • 12,000 $0.1500
  • 18,000 $0.1490
  • 30,000 $0.1470
$0.1470 / $0.1650 Buy Now
DISTI # IPN60R3K4CEATMA1CT-ND
DigiKey MOSFET N-CH 600V 2.6A SOT223 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 22634
In Stock
  • 1 $0.4900
  • 10 $0.4160
  • 100 $0.2889
  • 500 $0.2255
  • 1,000 $0.1833
  • 3,000 $0.1639
  • 6,000 $0.1555
  • 9,000 $0.1444
  • 30,000 $0.1411
$0.1411 / $0.4900 Buy Now
DISTI # IPN60R3K4CEATMA1
Avnet Americas Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel (Alt: IPN60R3K4CEATMA1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1723
  • 6,000 $0.1669
  • 12,000 $0.1615
  • 18,000 $0.1562
  • 24,000 $0.1508
$0.1508 / $0.1723 Buy Now
DISTI # 726-IPN60R3K4CEATMA1
Mouser Electronics MOSFET CONSUMER RoHS: Compliant 20305
  • 1 $0.4900
  • 10 $0.4160
  • 100 $0.2890
  • 500 $0.2260
  • 1,000 $0.1840
  • 3,000 $0.1550
  • 9,000 $0.1440
  • 24,000 $0.1410
$0.1410 / $0.4900 Buy Now
Future Electronics Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 18000
Reel
  • 3,000 $0.1490
  • 6,000 $0.1460
  • 9,000 $0.1450
  • 15,000 $0.1430
  • 30,000 $0.1380
$0.1380 / $0.1490 Buy Now
Future Electronics Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS™ Power Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.1500
  • 6,000 $0.1470
  • 12,000 $0.1450
  • 15,000 $0.1440
  • 45,000 $0.1380
$0.1380 / $0.1500 Buy Now
DISTI # 71240677
Verical Trans MOSFET N-CH 600V 2.6A 3-Pin SOT-223 T/R Min Qty: 108 Package Multiple: 1 Date Code: 2334 Americas - 11800
  • 108 $0.2913
  • 200 $0.2900
  • 500 $0.2450
  • 1,000 $0.2313
  • 2,000 $0.2300
  • 3,000 $0.2200
  • 6,000 $0.2088
$0.2088 / $0.2913 Buy Now
DISTI # IPN60R3K4CEATMA1
Avnet Americas Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel (Alt: IPN60R3K4CEATMA1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1723
  • 6,000 $0.1669
  • 12,000 $0.1615
  • 18,000 $0.1562
  • 24,000 $0.1508
$0.1508 / $0.1723 Buy Now
DISTI # C1S322000601668
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 11800
  • 5 $0.3750
  • 50 $0.2500
  • 100 $0.2330
  • 200 $0.2320
  • 500 $0.1960
  • 1,000 $0.1850
  • 2,000 $0.1840
  • 3,000 $0.1760
  • 6,000 $0.1670
$0.1670 / $0.3750 Buy Now
DISTI # SP001434888
EBV Elektronik Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 (Alt: SP001434888) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 2 Days EBV - 0
Buy Now
DISTI # 2617450
element14 Asia-Pacific MOSFET, N-CH, 600V, 2.6A, SOT-223-3 RoHS: Compliant Min Qty: 5 Container: Cut Tape 6336
  • 5 $0.4483
  • 50 $0.3886
  • 100 $0.3281
  • 500 $0.1991
  • 1,500 $0.1954
$0.1954 / $0.4483 Buy Now
DISTI # 2617450RL
element14 Asia-Pacific MOSFET, N-CH, 600V, 2.6A, SOT-223-3 RoHS: Compliant Min Qty: 100 Container: Reel 6336
  • 100 $0.3281
  • 500 $0.1991
  • 1,500 $0.1954
$0.1954 / $0.3281 Buy Now
DISTI # 2617450
Farnell MOSFET, N-CH, 600V, 2.6A, SOT-223-3 RoHS: Compliant Min Qty: 5 Lead time: 27 Weeks, 1 Days Container: Cut Tape 6326
  • 5 $0.4731
  • 50 $0.3919
  • 100 $0.3108
  • 500 $0.1885
  • 1,500 $0.1847
$0.1847 / $0.4731 Buy Now
DISTI # 2617450RL
Farnell MOSFET, N-CH, 600V, 2.6A, SOT-223-3 RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 6326
  • 100 $0.3108
  • 500 $0.1885
  • 1,500 $0.1847
$0.1847 / $0.3108 Buy Now
DISTI # 4319027
Farnell MOSFET, N-CH, 600V, 2.6A, SOT-223 RoHS: Compliant Min Qty: 3000 Lead time: 27 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.1722
  • 9,000 $0.1510
$0.1510 / $0.1722 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 24000
  • 3,000 $0.1971
  • 24,000 $0.1840
$0.1840 / $0.1971 Buy Now
Win Source Electronics MOSFET N-CH 600V 2.6A SOT223 / N-Channel 600 V 2.6A (Tc) 5W (Tc) Surface Mount PG-SOT223-3 160900
  • 150 $0.3400
  • 360 $0.2790
  • 560 $0.2700
  • 770 $0.2610
  • 990 $0.2530
  • 1,325 $0.2270
$0.2270 / $0.3400 Buy Now

Part Details for IPN60R3K4CEATMA1

IPN60R3K4CEATMA1 CAD Models

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IPN60R3K4CEATMA1 Part Data Attributes:

Parametric Data
IPN60R3K4CEATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPN60R3K4CEATMA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 15 Weeks
Samacsys Manufacturer Infineon
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain-source On Resistance-Max 3.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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