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Part Details for IPN80R1K2P7 by Infineon Technologies AG
Overview of IPN80R1K2P7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IPN80R1K2P7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPN80R1K2P7
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TME | Transistor: N-MOSFET, unipolar, 800V, 3.1A, 6.8W, PG-SOT223 Min Qty: 1 | 0 |
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$0.4510 / $0.7410 | RFQ |
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LCSC | SOT-223-3 MOSFETs ROHS | 17 |
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$1.5488 / $2.5798 | Buy Now |
Part Details for IPN80R1K2P7
IPN80R1K2P7 CAD Models
IPN80R1K2P7 Part Data Attributes:
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IPN80R1K2P7
Infineon Technologies AG
Buy Now
Datasheet
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IPN80R1K2P7
Infineon Technologies AG
Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |