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Transistors Power Field-Effect Transistors IPP65R110CFDAAKSA1

Transistors
IPP65R110CFDAAKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Overview of IPP65R110CFDAAKSA1 by Infineon Technologies AG

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Price & Stock for IPP65R110CFDAAKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 39AH8926
Newark Mosfet, Aec-Q101, N-Ch, 650V, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:31.2A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.099Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPP65R110CFDAAKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $7.9000
  • 10 $6.7700
  • 25 $6.1500
  • 50 $5.9000
  • 100 $5.6500
  • 250 $5.3100
  • 500 $4.9500
$4.9500 / $7.9000 Buy Now
DISTI # 448-IPP65R110CFDAAKSA1-ND
DigiKey MOSFET N-CH 650V 31.2A TO220-3 Min Qty: 500 Lead time: 17 Weeks Container: Tube Temporarily Out of Stock
  • 500 $3.9495
$3.9495 Buy Now
DISTI # IPP65R110CFDAAKSA1
Avnet Americas Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPP65R110CFDAAKS
Mouser Electronics MOSFETs N-Ch 650V 31.2A TO220-3 RoHS: Compliant 1961
  • 1 $7.6000
  • 10 $6.5100
  • 25 $5.9100
  • 100 $5.4300
  • 250 $5.1100
  • 500 $4.7600
  • 1,000 $4.0400
$4.0400 / $7.6000 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $4.3200
  • 150 $4.2000
  • 250 $4.1500
  • 500 $4.0800
  • 1,000 $3.9700
$3.9700 / $4.3200 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks Container: Tube 0
Tube
  • 50 $4.3200
  • 150 $4.2000
  • 250 $4.1500
  • 500 $4.0800
  • 1,000 $3.9700
$3.9700 / $4.3200 Buy Now
Chip 1 Exchange INSTOCK 3000
RFQ
DISTI # C1S322000898972
Chip1Stop MOSFET RoHS: Compliant Container: Tube 500
  • 1 $7.7500
  • 10 $5.7200
  • 50 $5.2000
  • 100 $4.7700
  • 200 $4.4900
  • 500 $4.1800
$4.1800 / $7.7500 Buy Now
DISTI # SP000895234
EBV Elektronik Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: SP000895234) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

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Part Data Attributes for IPP65R110CFDAAKSA1 by Infineon Technologies AG
Parametric Data

IPP65R110CFDAAKSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
No
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
17 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
845 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
31.2 A
Drain-source On Resistance-Max
0.11 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
99.6 A
Reference Standard
AEC-Q101
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPP65R110CFDAAKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
    VS

Alternate Parts for IPP65R110CFDAAKSA1

This table gives cross-reference parts and alternative options found for IPP65R110CFDAAKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R110CFDAAKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPP65R110CFDXKSA1 Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFDXKSA1
IPP65R110CFDXKSA2 Power Field-Effect Transistor, Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFDXKSA2
Part Number Description Manufacturer Compare
IPP65R110CFDXKSA2 Power Field-Effect Transistor, Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFDXKSA2
IPP65R110CFDXKSA1 Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFDXKSA1

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