Datasheets
IPP65R110CFDAAKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP65R110CFDAAKSA1 by Infineon Technologies AG

Overview of IPP65R110CFDAAKSA1 by Infineon Technologies AG

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Price & Stock for IPP65R110CFDAAKSA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8926
Newark Mosfet, Aec-Q101, N-Ch, 650V, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:31.2A, Drain Source Voltage Vds:650V, On Resistance Rds(On):0.099Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IPP65R110CFDAAKSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $7.9000
  • 10 $6.7700
  • 25 $6.1500
  • 50 $5.9000
  • 100 $5.6500
  • 250 $5.3100
  • 500 $4.9500
$4.9500 / $7.9000 Buy Now
DISTI # 448-IPP65R110CFDAAKSA1-ND
DigiKey MOSFET N-CH 650V 31.2A TO220-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube Temporarily Out of Stock
  • 1 $7.6000
  • 50 $6.0632
  • 100 $5.4250
  • 500 $4.7868
  • 1,000 $4.3081
  • 2,000 $4.0369
$4.0369 / $7.6000 Buy Now
DISTI # IPP65R110CFDAAKSA1
Avnet Americas Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 500 $4.8974
$4.8974 Buy Now
DISTI # 726-IPP65R110CFDAAKS
Mouser Electronics MOSFET N-Ch 650V 31.2A TO220-3 RoHS: Compliant 1983
  • 1 $7.6000
  • 10 $6.5100
  • 25 $5.9100
  • 100 $5.4300
  • 250 $5.1100
  • 500 $4.7600
  • 1,000 $4.0400
$4.0400 / $7.6000 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $4.4500
  • 150 $4.3300
  • 250 $4.2800
  • 500 $4.2000
  • 1,000 $4.0900
$4.0900 / $4.4500 Buy Now
Future Electronics CoolMOS RoHS: Non Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $4.4500
  • 150 $4.3300
  • 250 $4.2800
  • 500 $4.2000
  • 1,000 $4.0900
$4.0900 / $4.4500 Buy Now
Rochester Electronics IPP65R110 - AUTOMOTIVE RoHS: Compliant Status: Active Min Qty: 1 90
  • 1 $4.6100
  • 25 $4.5200
  • 100 $4.3300
  • 500 $4.1500
  • 1,000 $3.9200
$3.9200 / $4.6100 Buy Now
DISTI # IPP65R110CFDAAKSA1
Avnet Americas Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 500 $4.8974
$4.8974 Buy Now
Ameya Holding Limited MOSFET N-CH 650V TO-220-3 991
RFQ
Ameya Holding Limited   Min Qty: 14 2
  • 14 $9.4185
  • 26 $8.9485
$8.9485 / $9.4185 Buy Now
DISTI # IPP65R110CFDAAKSA1
Avnet Americas Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 500 $4.8974
$4.8974 Buy Now
Chip 1 Exchange INSTOCK 3000
RFQ
DISTI # 3155118
element14 Asia-Pacific MOSFET, AEC-Q101, N-CH, 650V, TO-220-3 RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $7.9774
  • 10 $6.2014
  • 100 $5.3647
  • 500 $4.9978
  • 1,000 $4.2419
$4.2419 / $7.9774 Buy Now
DISTI # 3155118
Farnell MOSFET, AEC-Q101, N-CH, 650V, TO-220-3 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 0
  • 1 $8.2671
  • 5 $7.0932
  • 10 $5.9068
  • 50 $5.6696
  • 100 $5.4198
  • 250 $5.1076
$5.1076 / $8.2671 Buy Now

Part Details for IPP65R110CFDAAKSA1

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IPP65R110CFDAAKSA1 Part Data Attributes

IPP65R110CFDAAKSA1 Infineon Technologies AG
Buy Now Datasheet
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IPP65R110CFDAAKSA1 Infineon Technologies AG Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 845 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 31.2 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 99.6 A
Reference Standard AEC-Q101
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPP65R110CFDAAKSA1

This table gives cross-reference parts and alternative options found for IPP65R110CFDAAKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP65R110CFDAAKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP65R110CFD Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFD
Part Number Description Manufacturer Compare
IPP65R110CFD Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP65R110CFDAAKSA1 vs IPP65R110CFD

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