Datasheets
IPP70N10S312AKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Part Details for IPP70N10S312AKSA1 by Infineon Technologies AG

Overview of IPP70N10S312AKSA1 by Infineon Technologies AG

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Price & Stock for IPP70N10S312AKSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics IPP70N10 - 75V-100V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 260
  • 1 $0.9285
  • 25 $0.9099
  • 100 $0.8728
  • 500 $0.8357
  • 1,000 $0.7892
$0.7892 / $0.9285 Buy Now
Chip1Cloud MOSFET N-CH 100V 70A TO220-3 19000
RFQ
DISTI # SP000407122
EBV Elektronik Power MOSFET, N Channel, 100 V, 70 A, 0.0097 ohm, TO-220, Through Hole (Alt: SP000407122) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2480865
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $2.1324
  • 10 $1.8824
  • 100 $1.6692
  • 500 $1.5148
  • 1,000 $1.3971
  • 2,500 $1.3162
  • 5,000 $1.2206
  • 10,000 $1.1250
$1.1250 / $2.1324 Buy Now
DISTI # 2480865
Farnell MOSFET, N-CH, 100V,70A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 15 Weeks, 1 Days Container: Each 0
  • 1 $1.9051
  • 10 $1.5040
  • 100 $1.1079
  • 250 $1.0365
  • 500 $0.9575
  • 1,000 $0.7934
  • 5,000 $0.7533
$0.7533 / $1.9051 Buy Now
Perfect Parts Corporation   3082
RFQ

Part Details for IPP70N10S312AKSA1

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IPP70N10S312AKSA1 Part Data Attributes

IPP70N10S312AKSA1 Infineon Technologies AG
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IPP70N10S312AKSA1 Infineon Technologies AG Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-220, 3 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 410 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.0116 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 280 A
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IPP70N10S312AKSA1

This table gives cross-reference parts and alternative options found for IPP70N10S312AKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPP70N10S312AKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPP70N10S3-12 Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPP70N10S3-12
Part Number Description Manufacturer Compare
FDB120N10 N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ, 800-REEL onsemi IPP70N10S312AKSA1 vs FDB120N10
IPP114N12N3G Power Field-Effect Transistor, 75A I(D), 100V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPP114N12N3G
IXTA80N10T7 Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN Littelfuse Inc IPP70N10S312AKSA1 vs IXTA80N10T7
IPD70N10S312ATMA1 Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG IPP70N10S312AKSA1 vs IPD70N10S312ATMA1
IPB70N10S312ATMA1 Power Field-Effect Transistor, 70A I(D), 100V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPB70N10S312ATMA1
IPP70N10S3-12 Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPP70N10S3-12
IRHNA57160SCVPBF Power Field-Effect Transistor, 75A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD1, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IRHNA57160SCVPBF
IPI70N10S312AKSA1 Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPI70N10S312AKSA1
IPB70N10S3L-12 Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPB70N10S3L-12
IPP70N10S312XK Power Field-Effect Transistor, 70A I(D), 100V, 0.0116ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPP70N10S312AKSA1 vs IPP70N10S312XK

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