Datasheets
IRF1302S by: International Rectifier

Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3

Part Details for IRF1302S by International Rectifier

Overview of IRF1302S by International Rectifier

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Price & Stock for IRF1302S

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 20V, 0.004OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 20
  • 1 $2.5000
  • 3 $2.3000
  • 12 $2.0000
$2.0000 / $2.5000 Buy Now

Part Details for IRF1302S

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IRF1302S Part Data Attributes

IRF1302S International Rectifier
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IRF1302S International Rectifier Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Pbfree Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 350 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Pulsed Drain Current-Max (IDM) 700 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1302S

This table gives cross-reference parts and alternative options found for IRF1302S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1302S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF1302STRR Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1302S vs IRF1302STRR
IRF1302SHR Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF1302S vs IRF1302SHR
IRF1302STRRPBF Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1302S vs IRF1302STRRPBF
IRF1302STRLPBF Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF1302S vs IRF1302STRLPBF
Part Number Description Manufacturer Compare
IRF230EBPBF 9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Infineon Technologies AG IRF1302S vs IRF230EBPBF
IRF230 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF1302S vs IRF230
IRF224 Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF1302S vs IRF224
IRF142 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF1302S vs IRF142
IRF230EDPBF 9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Infineon Technologies AG IRF1302S vs IRF230EDPBF
IRF133R 12A, 80V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF1302S vs IRF133R
IRF1302L Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN International Rectifier IRF1302S vs IRF1302L
IRF232R 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF1302S vs IRF232R
IRF141R 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF1302S vs IRF141R
IRF120 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF1302S vs IRF120

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