Datasheets
IRF230EBPBF by:

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF230EBPBF by International Rectifier

Overview of IRF230EBPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF230EBPBF

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IRF230EBPBF Part Data Attributes

IRF230EBPBF International Rectifier
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IRF230EBPBF International Rectifier Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 54 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.49 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 115 ns

Alternate Parts for IRF230EBPBF

This table gives cross-reference parts and alternative options found for IRF230EBPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF230EBPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF230EB Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF230EBPBF vs IRF230EB
IRF230EBPBF 9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Infineon Technologies AG IRF230EBPBF vs IRF230EBPBF
Part Number Description Manufacturer Compare
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF230EBPBF vs 2N6758
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF230EBPBF vs IRF141
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, FORMERLY TO-3, 2 PIN Defense Logistics Agency IRF230EBPBF vs JANTXV2N6756
IRF1302SHR Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier IRF230EBPBF vs IRF1302SHR
IRF220 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF230EBPBF vs IRF220
BUZ25 19A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF230EBPBF vs BUZ25
IRF120PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF230EBPBF vs IRF120PBF
2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Fairchild Semiconductor Corporation IRF230EBPBF vs 2N6756
IRF140-JQR-B 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 TT Electronics Power and Hybrid / Semelab Limited IRF230EBPBF vs IRF140-JQR-B
IRF225 Power Field-Effect Transistor, 3.3A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF230EBPBF vs IRF225

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