Datasheets
IRF331 by:

TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3

Part Details for IRF331 by National Semiconductor Corporation

Overview of IRF331 by National Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRF331

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IRF331 Part Data Attributes

IRF331 National Semiconductor Corporation
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IRF331 National Semiconductor Corporation TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,5.5A I(D),TO-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 5.5 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for IRF331

This table gives cross-reference parts and alternative options found for IRF331. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF331, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6760 2N6760, TO3-3 New England Semiconductor IRF331 vs 2N6760
IRF331 IRF331 Texas Instruments IRF331 vs IRF331
IRF330 IRF330 Microsemi Corporation IRF331 vs IRF330
IRF330 IRF330, TO3-3 New England Semiconductor IRF331 vs IRF330
IRF332 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Samsung Semiconductor IRF331 vs IRF332
IRF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA National Semiconductor Corporation IRF331 vs IRF332
IRF330 IRF330 Silicon Transistor Corporation IRF331 vs IRF330
IRF331 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Samsung Semiconductor IRF331 vs IRF331
2N6760 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation IRF331 vs 2N6760

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