Transistors
IRF522
Description: Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRF522 by Samsung Semiconductor

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Part Data Attributes for IRF522 by Samsung Semiconductor

IRF522
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
36 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
8 A
Drain-source On Resistance-Max
0.36 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
60 W
Power Dissipation-Max (Abs)
60 W
Pulsed Drain Current-Max (IDM)
32 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
57 ns
Turn-on Time-Max (ton)
58 ns
Want to compare parts?
  1. IRF522
    Samsung Semiconductor
    Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRF522

This table gives cross-reference parts and alternative options found for IRF522. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF522, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF522 Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF522 vs IRF522
IRF520-010 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF522 vs IRF520-010
IRF523 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation IRF522 vs IRF523
IRF522 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF522 vs IRF522
IRF523 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF522 vs IRF523
IRF520PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF522 vs IRF520PBF
IRF521 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF522 vs IRF521
IRF521 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF522 vs IRF521
IRF522 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRF522 vs IRF522
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRF522 vs IRF520
Part Number Description Manufacturer Compare
IRF523-009 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF522 vs IRF523-009
IRF522-009 Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF522 vs IRF522-009
IRF521 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF522 vs IRF521
IRF521-006 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF522 vs IRF521-006
IRF520PBF Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF522 vs IRF520PBF
IRF520-010 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF522 vs IRF520-010
IRF523 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF522 vs IRF523
IRF523-001 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF522 vs IRF523-001
IRF521 8A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF522 vs IRF521
IRF521-010 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF522 vs IRF521-010

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