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| Manufacturer | Description | Price Range | Set Alert | Details |
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| Internet Systems Consortium Inc | $0.7596 / $1.2881 |
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| Motorola Semiconductor Products | Power Field-Effect Transistor, 7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Diodes Incorporated | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-220AB |
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| Samsung Semiconductor | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| New Jersey Semiconductor Products Inc | Power Field-Effect Transistor, 7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Supertex Inc | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| TT Electronics Power and Hybrid / Semelab Limited | Power Field-Effect Transistor, 7A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| TT Electronics Resistors | Power Field-Effect Transistor, 7A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Freescale Semiconductor | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,8A I(D),TO-220AB |
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| FCI Semiconductor | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| National Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Texas Instruments | IRF522 |
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| International Rectifier | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Zetex / Diodes Inc | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| STMicroelectronics | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Microchip Technology Inc | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Advanced Microelectronic Products Inc | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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