Part Details for IRF530 by International Rectifier
Overview of IRF530 by International Rectifier
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF530
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 5 | 50 |
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$0.7313 / $1.1250 | Buy Now |
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Bristol Electronics | 657 |
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RFQ | ||
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Bristol Electronics | 4189 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 50 |
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$0.5000 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 50 |
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$0.7500 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 40 |
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$0.7500 / $1.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 28 |
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$0.9900 / $1.6500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 49 |
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$1.4875 / $2.3800 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 309 |
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$2.0430 / $3.3129 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 27 |
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$5.8000 / $8.7000 | Buy Now |
Part Details for IRF530
IRF530 CAD Models
IRF530 Part Data Attributes:
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IRF530
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF530
International Rectifier
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 88 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF530
This table gives cross-reference parts and alternative options found for IRF530. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF532 | Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF530 vs IRF532 |
| MTP12N10E | 12A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN | onsemi | IRF530 vs MTP12N10E |
| IRF532 | 12A, 100V, 0.23ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF530 vs IRF532 |
| RFP12N10 | 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF530 vs RFP12N10 |
| IRF531 | 14A, 80V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF530 vs IRF531 |
| MTP10N08 | 10A, 80V, 0.33ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF530 vs MTP10N08 |
| IRF533 | Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF530 vs IRF533 |
| IRF531 | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF530 vs IRF531 |
| IRF531 | 14A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF530 vs IRF531 |
| BUZ20 | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF530 vs BUZ20 |