Parametric results for: IRF530 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 18 AVALANCHE RATED, HIGH RELIABILITY 18 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 1 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 1 LEADFORM OPTIONS ARE AVAILABLE 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY 7

342 hits Apply

69.0 mJ 56 70.0 mJ 1 80.0 mJ 1 85.0 mJ 1 93.0 mJ 19 98.0 mJ 3 150.0 mJ 3 261.0 mJ 6 280.0 mJ 21

Min (mJ) - Max (mJ)

342 hits Apply

DRAIN 295 ISOLATED 2

342 hits Apply

Configuration (3)

SINGLE 262 Single 1 SINGLE WITH BUILT-IN DIODE 75

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DS Breakdown Voltage-Min (4)

55 V 94 80 V 2 100 V 224 600 V 1

Min (V) - Max (V)

342 hits Apply

Drain Current-Max (Abs) (ID) (1)

14 A 1

342 hits Apply

Drain Current-Max (ID) (8)

10 A 3 12 A 2 14 A 127 15 A 77 16 A 3 17 A 24 22 A 3 31 A 94

Min (A) - Max (A)

342 hits Apply

Drain-source On Resistance-Max (8)

60 mΩ 89 64 mΩ 2 65 mΩ 4 90 mΩ 19 110 mΩ 85 140 mΩ 3 160 mΩ 109 180 mΩ 2

Min (Ω) - Max (Ω)

342 hits Apply

METAL-OXIDE SEMICONDUCTOR 338

342 hits Apply

100 pF 2 150 pF 3

Min (pF) - Max (pF)

342 hits Apply

TO-220 1 TO-220AB 264 TO-252 2 TO-252AA 4 TO-262AA 6 TO-263AB 11

342 hits Apply

R-PSFM-T2 1 R-PSFM-T3 268 R-PSIP-T3 6 R-PSSO-G2 38

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e0 92 e3 175

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Manufacturer (32)

Advanced Microelectronic Products Inc 1 Diodes Incorporated 1 Dynex Semiconductor 1 Fairchild Semiconductor Corporation 8 FCI Semiconductor 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 90 International Rectifier 152 Intersil Corporation 3 Micro Electronics Corporation 1 Micro Electronics Ltd 1 Microsemi Corporation 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17 National Semiconductor Corporation 2 New Jersey Semiconductor Products Inc 8 NXP Semiconductors 3 onsemi 2 Philips Semiconductors 1 Plessey Semiconductors Ltd 1 Rochester Electronics LLC 2 Samsung Semiconductor 2 STMicroelectronics 3 Texas Instruments 2 Thomson Consumer Electronics 2 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1 Vishay Intertechnologies 8 Vishay Siliconix 5 Zetex / Diodes Inc 1

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1 32 NOT APPLICABLE 1 NOT SPECIFIED 1

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Number of Elements (1)

1 337

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Number of Terminals (2)

2 39 3 274

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ENHANCEMENT MODE 338

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150.0 °C 15 175.0 °C 108

Min (°C) - Max (°C)

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-55.0 °C 4

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PLASTIC/EPOXY 313

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RECTANGULAR 313

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FLANGE MOUNT 269 IN-LINE 6 SMALL OUTLINE 38

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Active 24 Contact Manufacturer 6 End Of Life 1 Obsolete 190 Transferred 121

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No 49 Yes 85

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225 11 235 3 240 1 250 3 260 14 NOT SPECIFIED 30

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Polarity/Channel Type (2)

N-CHANNEL 244 P-CHANNEL 94

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35 W 1 60 W 38 70 W 2 75 W 35 77 W 1 79 W 3 88 W 42 110 W 1

Min (W) - Max (W)

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35 W 1 40 W 1 55 W 2 63 W 4 70 W 2 75 W 24 79 W 7 83 W 1 85 W 3 88 W 6 110 W 15

Min (W) - Max (W)

342 hits Apply

Surface Mount (2)

NO 292 YES 38

342 hits Apply