Datasheets
IRF540 by:

22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Details for IRF540 by STMicroelectronics

Overview of IRF540 by STMicroelectronics

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Price & Stock for IRF540

Part # Distributor Description Stock Price Buy
Bristol Electronics   200
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-220AB 96
  • 1 $1.3750
  • 21 $1.1000
  • 69 $0.8250
$0.8250 / $1.3750 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 57
  • 1 $3.2000
  • 11 $2.0000
  • 39 $1.2000
$1.2000 / $3.2000 Buy Now
Chip 1 Exchange INSTOCK 718
RFQ

Part Details for IRF540

IRF540 CAD Models

IRF540 Part Data Attributes:

IRF540 STMicroelectronics
Buy Now Datasheet
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IRF540 STMicroelectronics 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 22 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 88 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 230 ns
Turn-on Time-Max (ton) 105 ns

Alternate Parts for IRF540

This table gives cross-reference parts and alternative options found for IRF540. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540-001 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540 vs IRF540-001
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF540 vs IRF540
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF540 vs IRF540
IRF542 POWER, FET National Semiconductor Corporation IRF540 vs IRF542
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF540 vs IRF540-009
IRF542 Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF540 vs IRF542
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF540 vs IRF542
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF540 vs IRF540
934055542127 TRANSISTOR 23 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRF540 vs 934055542127
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF540 vs IRF542
Part Number Description Manufacturer Compare
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF540 vs IRF540-009
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF540 vs IRF540PBF
MTP25N06 25A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF540 vs MTP25N06
NTB6412ANT4G Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL onsemi IRF540 vs NTB6412ANT4G
IRF541-001 Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF540 vs IRF541-001
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF540 vs IRF540
MTB33N10ET4 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi IRF540 vs MTB33N10ET4
2SK1928 TRANSISTOR 27 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF540 vs 2SK1928
IRF543 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF540 vs IRF543
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF540 vs IRF540

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