Datasheets
IRF6216TRPBF-1 by:

Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Part Details for IRF6216TRPBF-1 by Infineon Technologies AG

Overview of IRF6216TRPBF-1 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for IRF6216TRPBF-1

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IRF6216TRPBF-1 Part Data Attributes

IRF6216TRPBF-1 Infineon Technologies AG
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IRF6216TRPBF-1 Infineon Technologies AG Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 2.2 A
Drain-source On Resistance-Max 0.24 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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