Datasheets
IRF7201PBF by:

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Part Details for IRF7201PBF by Infineon Technologies AG

Results Overview of IRF7201PBF by Infineon Technologies AG

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IRF7201PBF Information

IRF7201PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7201PBF

Part # Distributor Description Stock Price Buy
DISTI # SP001559738
EBV Elektronik Trans MOSFET NCH 30V 73A 8Pin SOIC (Alt: SP001559738) RoHS: Compliant Min Qty: 3800 Package Multiple: 3800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 30V 7.3A 8-SOIC 57000
  • 185 $0.2767
  • 445 $0.2271
  • 685 $0.2200
  • 940 $0.2129
  • 1,215 $0.2058
  • 1,630 $0.1845
$0.1845 / $0.2767 Buy Now

Part Details for IRF7201PBF

IRF7201PBF CAD Models

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IRF7201PBF Part Data Attributes

IRF7201PBF Infineon Technologies AG
Buy Now Datasheet
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IRF7201PBF Infineon Technologies AG Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.3 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 58 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7201PBF

This table gives cross-reference parts and alternative options found for IRF7201PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7201PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NDS9410 National Semiconductor Corporation Check for Price TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power IRF7201PBF vs NDS9410
IRF7201TRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7201PBF vs IRF7201TRPBF
Part Number Manufacturer Composite Price Description Compare
MMSF6N01HD Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 6A I(D), 12V, 0.045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 IRF7201PBF vs MMSF6N01HD
IRF7201TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA IRF7201PBF vs IRF7201TRPBF
MMSF6N01HD Motorola Mobility LLC Check for Price 6A, 12V, 0.045ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, CASE 751-05, SOIC-8 IRF7201PBF vs MMSF6N01HD
IRF7201PBF International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7201PBF vs IRF7201PBF
IRF7201TR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, IRF7201PBF vs IRF7201TR
AP2304AGN Advanced Power Electronics Corp Check for Price TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE PACKAGE-3, FET General Purpose Power IRF7201PBF vs AP2304AGN
DMN3025LSS-13 Diodes Incorporated $0.1165 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF7201PBF vs DMN3025LSS-13
AP2302GN-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power IRF7201PBF vs AP2302GN-HF
AP2302GN Advanced Power Electronics Corp Check for Price TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power IRF7201PBF vs AP2302GN
IRF7201 International Rectifier Check for Price Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 IRF7201PBF vs IRF7201

IRF7201PBF Related Parts

IRF7201PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7201PBF is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.

  • The recommended gate drive voltage for the IRF7201PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF7201PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging.

  • The maximum allowable power dissipation for the IRF7201PBF is 125W, but this can be increased with proper heat sinking and thermal management.

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