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Transistors Power Field-Effect Transistors IRF7311TR

Transistors
IRF7311TR
Description: Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8

Overview of IRF7311TR by International Rectifier

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Price & Stock for IRF7311TR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1557
RFQ
Quest Components 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 2724
  • 1 $2.7924
  • 466 $1.1519
  • 869 $1.0472
$1.0472 / $2.7924 Buy Now
Quest Components 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 1916
  • 1 $1.6000
  • 251 $0.6400
  • 1,251 $0.5600
$0.5600 / $1.6000 Buy Now
Quest Components 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA 668
  • 1 $1.4000
  • 87 $0.4200
  • 477 $0.3640
$0.3640 / $1.4000 Buy Now

CAD Models for IRF7311TR by International Rectifier
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Part Data Attributes for IRF7311TR by International Rectifier
Parametric Data

IRF7311TR
International Rectifier
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
Package Description
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
100 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
6.6 A
Drain-source On Resistance-Max
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Number of Elements
2
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
2 W
Pulsed Drain Current-Max (IDM)
26 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7311TR
    International Rectifier
    Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
    VS

Alternate Parts for IRF7311TR

This table gives cross-reference parts and alternative options found for IRF7311TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7311TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7311 Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7311TR vs IRF7311
IRF7311PBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7311TR vs IRF7311PBF
IRF7311TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7311TR vs IRF7311TRPBF
IRF7311 Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7311TR vs IRF7311
IRF7311TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7311TR vs IRF7311TRPBF
Part Number Description Manufacturer Compare
IRF7301TRPBF Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7311TR vs IRF7301TRPBF
IRF7311PBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7311TR vs IRF7311PBF
FDS8926A_NL Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation IRF7311TR vs FDS8926A_NL
IRF7311 Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7311TR vs IRF7311
IRF7311TR Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7311TR vs IRF7311TR
MMDF4N01HD Power Field-Effect Transistor, 4A I(D), 12V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products IRF7311TR vs MMDF4N01HD
IRF7311TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7311TR vs IRF7311TRPBF
IRF7311TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7311TR vs IRF7311TRPBF
IRF7301PBF Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7311TR vs IRF7301PBF
IRF7311 Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7311TR vs IRF7311

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