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Transistors / Power Field-Effect Transistors / IRF7341TRPBF
Datasheets
IRF7341TRPBF by:

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7341TRPBF by Infineon Technologies AG

Overview of IRF7341TRPBF by Infineon Technologies AG

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Applications Industrial Automation Automotive Motor control systems

Price & Stock for IRF7341TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8261
Newark Dual N Channel Mosfet, 55V, 4.7A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:4.7A, Continuous Drain Current Id P Channel:4.7A Rohs Compliant: Yes |Infineon IRF7341TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # IRF7341PBFCT-ND
DigiKey MOSFET 2N-CH 55V 4.7A 8SO Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 14298
In Stock
  • 1 $1.0900
  • 10 $0.8910
  • 100 $0.6931
  • 500 $0.5875
  • 1,000 $0.4786
  • 2,000 $0.4506
  • 4,000 $0.4505
  • 8,000 $0.4291
  • 12,000 $0.4093
$0.4093 / $1.0900 Buy Now
DISTI # 70017698
RS IRF7341TRPBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC | Infineon IRF7341TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $0.7500
  • 100 $0.7100
  • 500 $0.6700
  • 1,000 $0.6300
$0.6300 / $0.7500 RFQ
Future Electronics Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel 76000
Reel
  • 4,000 $0.5750
  • 8,000 $0.5650
  • 12,000 $0.5600
  • 16,000 $0.5550
  • 20,000 $0.5400
$0.5400 / $0.5750 Buy Now
Future Electronics Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel 0
Reel
  • 4,000 $0.4150
  • 8,000 $0.4000
$0.4000 / $0.4150 Buy Now
Quest Components MOSFET Transistor, Matched Pair, N-Channel, SO 1556
  • 1 $2.4800
  • 162 $0.9920
  • 807 $0.8680
$0.8680 / $2.4800 Buy Now
Ameya Holding Limited Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8 8000
RFQ
Chip 1 Exchange INSTOCK 2000
RFQ
CHIPMALL.COM LIMITED 55V N HEXFET Power MOSFET, SO-8 762
  • 1 $0.3428
$0.3428 Buy Now
CHIPMALL.COM LIMITED MOSFET 2N-CH 55V 4.7A 8-SOIC 7397
  • 1 $0.3867
  • 10 $0.3194
  • 100 $0.2550
  • 500 $0.1877
  • 1,000 $0.1777
$0.1777 / $0.3867 Buy Now
DISTI # SP001554204
EBV Elektronik Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC T/R (Alt: SP001554204) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 1 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2468015
element14 Asia-Pacific MOSFET, DUAL N CH, 55V, 4.7A, SOIC-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $0.6827
  • 10 $0.5599
  • 100 $0.4627
  • 500 $0.3914
  • 1,000 $0.3288
  • 5,000 $0.3200
$0.3200 / $0.6827 Buy Now
DISTI # 2468015RL
element14 Asia-Pacific MOSFET, DUAL N CH, 55V, 4.7A, SOIC-8 RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.4627
  • 500 $0.3914
  • 1,000 $0.3288
  • 5,000 $0.3200
$0.3200 / $0.4627 Buy Now
DISTI # 2468015
Farnell MOSFET, DUAL N CH, 55V, 4.7A, SOIC-8 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Cut Tape 0
  • 1 $0.6117
  • 10 $0.6016
  • 100 $0.5903
  • 500 $0.5803
  • 1,000 $0.5689
  • 5,000 $0.5589
$0.5589 / $0.6117 Buy Now
DISTI # 2468015RL
Farnell MOSFET, DUAL N CH, 55V, 4.7A, SOIC-8 RoHS: Compliant Min Qty: 100 Lead time: 11 Weeks, 1 Days Container: Reel 0
  • 100 $0.5903
  • 500 $0.5803
  • 1,000 $0.5689
  • 5,000 $0.5589
$0.5589 / $0.5903 Buy Now
New Advantage Corporation Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET� Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 4000 4000
  • 4,000 $0.4209
$0.4209 Buy Now
Win Source Electronics MOSFET 2N-CH 55V 4.7A 8-SOIC 961154
  • 150 $0.3400
  • 360 $0.2790
  • 560 $0.2700
  • 770 $0.2610
  • 990 $0.2530
  • 1,325 $0.2270
$0.2270 / $0.3400 Buy Now

Part Details for IRF7341TRPBF

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IRF7341TRPBF Part Data Attributes

Parametric Data
IRF7341TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7341TRPBF Infineon Technologies AG Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7341TRPBF

This table gives cross-reference parts and alternative options found for IRF7341TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7341TRPBF vs IRF7341PBF
IRF7341GTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341TRPBF vs IRF7341GTRPBF
IRF7341QTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341QTRPBF
IRF7341TRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341TRPBF
IRF7341UTRPBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341UTRPBF
IRF7341UPBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341UPBF
AUIRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7341TRPBF vs AUIRF7341Q
IRF7341 Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7341TRPBF vs IRF7341
IRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7341TRPBF vs IRF7341Q
AUIRF7341QTR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7341TRPBF vs AUIRF7341QTR
Part Number Description Manufacturer Compare
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7341TRPBF vs IRF7341PBF
IRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7341TRPBF vs IRF7341Q
IRF7341QTRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341QTRPBF
IRF7341UTRPBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341UTRPBF
AUIRF7341Q Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7341TRPBF vs AUIRF7341Q
IRF7341 Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 Infineon Technologies AG IRF7341TRPBF vs IRF7341
AUIRF7341QTR Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 Infineon Technologies AG IRF7341TRPBF vs AUIRF7341QTR
IRF7341TRPBF Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 International Rectifier IRF7341TRPBF vs IRF7341TRPBF
IRF7341IPBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN International Rectifier IRF7341TRPBF vs IRF7341IPBF
IRF7341PBF Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7341TRPBF vs IRF7341PBF

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