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Transistors / Power Field-Effect Transistors / IRF7341TRPBF
Datasheets
IRF7341TRPBF by:

Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8

Part Details for IRF7341TRPBF by Infineon Technologies AG

Results Overview of IRF7341TRPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Automotive Motor control systems

IRF7341TRPBF Information

IRF7341TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF7341TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 19K8261
Newark Dual N Channel Mosfet, 55V, 4.7A, Channel Type:N Channel, Drain Source Voltage Vds N Channel:55V, Drain Source Voltage Vds P Channel:55V, Continuous Drain Current Id N Channel:4.7A, Continuous Drain Current Id P Channel:4.7A Rohs Compliant: Yes |Infineon IRF7341TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 70017698
RS IRF7341TRPBF Dual N-channel MOSFET Transistor, 4.7 A, 55 V, 8-Pin SOIC | Infineon IRF7341TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $0.7500
  • 100 $0.7100
  • 500 $0.6700
  • 1,000 $0.6300
$0.6300 / $0.7500 RFQ
Rochester Electronics IRF7341TRPBF - PLANAR 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 905
  • 1 $0.4336
  • 25 $0.4249
  • 100 $0.4076
  • 500 $0.3902
  • 1,000 $0.3686
$0.3686 / $0.4336 Buy Now
Chip 1 Exchange INSTOCK 2000
RFQ
DISTI # C1S322000483956
Chip One Stop Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 3802
  • 5 $1.5700
  • 10 $0.9950
  • 50 $0.8460
  • 100 $0.6650
  • 200 $0.6300
  • 500 $0.5230
  • 1,000 $0.4780
$0.4780 / $1.5700 Buy Now
Chip Stock   47405
RFQ
DISTI # SP001554204
EBV Elektronik MOSFET Array, Dual N Channel, 55 V, 4.7 A, 50 Milliohms, 8 Pins, SOIC (Alt: SP001554204) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 9 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 4.7A 2W 0.0510V4.7A 1V 2 N-Channel SOIC-8 MOSFETs ROHS 1665
  • 5 $0.2830
  • 50 $0.2308
  • 150 $0.2048
  • 500 $0.1852
  • 4,000 $0.1617
  • 8,000 $0.1591
$0.1591 / $0.2830 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 9036
  • 25 $0.3300
  • 100 $0.2600
  • 500 $0.1900
$0.1900 / $0.3300 Buy Now
Win Source Electronics MOSFET 2N-CH 55V 4.7A 8-SOIC 148952
  • 255 $0.1964
  • 545 $0.1838
  • 850 $0.1774
  • 1,215 $0.1648
  • 1,580 $0.1584
  • 1,975 $0.1521
$0.1521 / $0.1964 Buy Now

Part Details for IRF7341TRPBF

IRF7341TRPBF CAD Models

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IRF7341TRPBF Part Data Attributes

Parametric Data
IRF7341TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF7341TRPBF Infineon Technologies AG Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 140 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 42 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7341TRPBF

This table gives cross-reference parts and alternative options found for IRF7341TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF7341QPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 IRF7341TRPBF vs IRF7341QPBF
Part Number Manufacturer Composite Price Description Compare
AUIRF7341QTR International Rectifier Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 IRF7341TRPBF vs AUIRF7341QTR
IRF7341PBF International Rectifier Check for Price Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7341TRPBF vs IRF7341PBF
IRF7341IPBF International Rectifier Check for Price Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN IRF7341TRPBF vs IRF7341IPBF
IRF7341TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7341TRPBF vs IRF7341TRPBF
IRF7341PBF Infineon Technologies AG $0.5413 Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 IRF7341TRPBF vs IRF7341PBF
IRF7341 International Rectifier Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7341TRPBF vs IRF7341
AUIRF7341QTR Infineon Technologies AG $0.9434 Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 IRF7341TRPBF vs AUIRF7341QTR
IRF7341 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7341TRPBF vs IRF7341
IRF7341GTRPBF Infineon Technologies AG $1.0483 Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 IRF7341TRPBF vs IRF7341GTRPBF
IRF7341TR International Rectifier Check for Price Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 IRF7341TRPBF vs IRF7341TR

IRF7341TRPBF Related Parts

IRF7341TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF7341TRPBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF7341TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF7341TRPBF is suitable for high-frequency switching applications, but ensure the device is operated within its specified frequency range and follow proper PCB design guidelines to minimize parasitic inductance and capacitance.

  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment.

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