Parametric results for: IRF7341TRPBF under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 2

3 hits Apply

72.0 mJ 1 140.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

3 hits Apply

Drain Current-Max (ID) (2)

4.7 A 1 5.1 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

71 pF 1

3 hits Apply

MS-012AA 3

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 1

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

260 2 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

2 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply