Part Details for IRF7341TRPBF by International Rectifier
Overview of IRF7341TRPBF by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Automotive
Motor control systems
Price & Stock for IRF7341TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 291 |
|
RFQ | ||
|
|
Bristol Electronics | 13 |
|
RFQ | ||
|
|
Bristol Electronics | 58 |
|
RFQ | ||
|
|
Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 4 |
|
$2.9100 / $3.8800 | Buy Now |
|
|
Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 10 |
|
$7.8000 / $11.7000 | Buy Now |
|
|
Quest Components | MOSFET Transistor, Matched Pair, N-Channel, SO | 3200 |
|
$0.7470 / $2.4900 | Buy Now |
|
|
ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 1065 |
|
RFQ | |
|
|
NexGen Digital | 4 |
|
RFQ | ||
|
|
Chip Stock | 11238 |
|
RFQ |
Part Details for IRF7341TRPBF
IRF7341TRPBF CAD Models
IRF7341TRPBF Part Data Attributes
|
|
IRF7341TRPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRF7341TRPBF
International Rectifier
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 5.1 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7341TRPBF
This table gives cross-reference parts and alternative options found for IRF7341TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7341TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7341PBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7341TRPBF vs IRF7341PBF |
| IRF7341GTRPBF | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | IRF7341TRPBF vs IRF7341GTRPBF |
| IRF7341QTRPBF | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | IRF7341TRPBF vs IRF7341QTRPBF |
| IRF7341UTRPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 | International Rectifier | IRF7341TRPBF vs IRF7341UTRPBF |
| IRF7341UPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MS-012AA, SOP-8 | International Rectifier | IRF7341TRPBF vs IRF7341UPBF |
| AUIRF7341Q | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | IRF7341TRPBF vs AUIRF7341Q |
| IRF7341 | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7341TRPBF vs IRF7341 |
| IRF7341Q | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7341TRPBF vs IRF7341Q |
| AUIRF7341QTR | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | IRF7341TRPBF vs AUIRF7341QTR |
| IRF7341IPBF | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN | International Rectifier | IRF7341TRPBF vs IRF7341IPBF |