Renesas Electronics Corporation |
- Bulk (Alt: IRF743) |
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Harris Semiconductor |
Power Field-Effect Transistor, 8A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.9959 / $3.5700
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STMicroelectronics |
8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
$3.1000 / $4.6500
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Fairchild Semiconductor Corporation |
MOSFET Transistor, N-Channel, TO-220AB |
$2.3250 / $4.6500
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Intersil Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8A I(D),TO-220AB |
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Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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TT Electronics Power and Hybrid / Semelab Limited |
8.3A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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TT Electronics Resistors |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Samsung Semiconductor |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Rochester Electronics LLC |
8A, 350V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Texas Instruments |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8A I(D),TO-220AB |
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National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,8A I(D),TO-220AB |
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International Rectifier |
Power Field-Effect Transistor, 8.3A I(D), 350V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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General Electric Solid State |
Transistor |
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