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Transistors Power Field-Effect Transistors IRF7469PBF

Transistors
IRF7469PBF
Description: Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8

Overview of IRF7469PBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF7469PBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1604
RFQ
Bristol Electronics   66
RFQ

CAD Models for IRF7469PBF by International Rectifier
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Part Data Attributes for IRF7469PBF by International Rectifier
Parametric Data

IRF7469PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC
Package Description
LEAD FREE, SO-8
Pin Count
8
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
210 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
40 V
Drain Current-Max (ID)
9 A
Drain-source On Resistance-Max
0.017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
73 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF7469PBF
    International Rectifier
    Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
    VS

Alternate Parts for IRF7469PBF

This table gives cross-reference parts and alternative options found for IRF7469PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7469PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7470 Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7469PBF vs IRF7470
IRF7469PBF Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRF7469PBF vs IRF7469PBF
IRF7470TR Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7469PBF vs IRF7470TR
IRF7470TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7469PBF vs IRF7470TRPBF
UPA2706GR-A Power Field-Effect Transistor, 11A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 NEC Electronics Group IRF7469PBF vs UPA2706GR-A
IRF7470PBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7469PBF vs IRF7470PBF
UPA2706GR-A 11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation IRF7469PBF vs UPA2706GR-A
UPA2706GR 11A, 30V, 0.029ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation IRF7469PBF vs UPA2706GR
IRF7470TRPBF Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG IRF7469PBF vs IRF7470TRPBF

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