Parametric results for: IRF7469PBF under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

210.0 mJ 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 1

4 hits Apply

Drain Current-Max (ID) (1)

9 A 1

4 hits Apply

Drain-source On Resistance-Max (1)

17 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

4 hits Apply

MS-012AA 1

4 hits Apply

R-PDSO-G8 1

4 hits Apply

e3 2

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Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 2

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 1

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Number of Terminals (1)

8 1

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ENHANCEMENT MODE 1

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150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Obsolete 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 2 NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

4 hits Apply

2.5 W 1

4 hits Apply

Surface Mount (1)

YES 1

4 hits Apply