Part Details for IRF7478TR by International Rectifier
Overview of IRF7478TR by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF7478TR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 7 |
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RFQ | ||
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Quest Components | 5 |
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$2.8750 / $3.4500 | Buy Now | |
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Chip1Cloud | 1960 |
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RFQ | ||
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Win Source Electronics | 230813 |
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$0.5280 / $0.7920 | Buy Now |
Part Details for IRF7478TR
IRF7478TR CAD Models
IRF7478TR Part Data Attributes:
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IRF7478TR
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF7478TR
International Rectifier
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | SOIC | |
| Package Description | SOP-8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 37 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7478TR
This table gives cross-reference parts and alternative options found for IRF7478TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7478TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDS5690L86Z | Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7478TR vs FDS5690L86Z |
| FDS5690_NL | Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7478TR vs FDS5690_NL |
| IRF7478TRPBF | Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 | Infineon Technologies AG | IRF7478TR vs IRF7478TRPBF |
| FDS5690D84Z | Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7478TR vs FDS5690D84Z |
| FDS5690F011 | Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | IRF7478TR vs FDS5690F011 |
| IRF7478 | Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7478TR vs IRF7478 |
| IRF7478TRPBF-1 | Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | IRF7478TR vs IRF7478TRPBF-1 |
| FDS5690 | 60V N-Channel PowerTrench® MOSFET 7A, 28mΩ, 2500-REEL | onsemi | IRF7478TR vs FDS5690 |
| IRF7478QPBF | Small Signal Field-Effect Transistor, 7A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 | International Rectifier | IRF7478TR vs IRF7478QPBF |
| IRF7478QTRPBF | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | International Rectifier | IRF7478TR vs IRF7478QTRPBF |