Datasheets
IRF7509TR by:

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8

Part Details for IRF7509TR by International Rectifier

Overview of IRF7509TR by International Rectifier

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Price & Stock for IRF7509TR

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 30V, 0.135OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 83
  • 1 $10.4352
  • 5 $5.2176
  • 39 $4.5219
$4.5219 / $10.4352 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 30V, 0.135OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 5439
  • 1 $2.4125
  • 830 $0.8444
  • 1,777 $0.7238
$0.7238 / $2.4125 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 30V, 0.135OHM, 2-ELEMENT, N-CHANNEL AND P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 270
  • 1 $21.8172
  • 52 $18.5446
  • 109 $17.4538
$17.4538 / $21.8172 Buy Now

Part Details for IRF7509TR

IRF7509TR CAD Models

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IRF7509TR Part Data Attributes

IRF7509TR International Rectifier
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IRF7509TR International Rectifier Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description MICRO-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e0
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1.25 W
Pulsed Drain Current-Max (IDM) 21 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF7509TR

This table gives cross-reference parts and alternative options found for IRF7509TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7509TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7509PBF Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-8, SOIC-8 International Rectifier IRF7509TR vs IRF7509PBF
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7509TR vs IRF7509TR
IRF7509TRPBF Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 International Rectifier IRF7509TR vs IRF7509TRPBF
Part Number Description Manufacturer Compare
IRF7509TR Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 Infineon Technologies AG IRF7509TR vs IRF7509TR
IRF9952TR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF7509TR vs IRF9952TR
NTMD2C02R2SG 5.2A, 20V, 0.043ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 751-07, SOIC-8 Rochester Electronics LLC IRF7509TR vs NTMD2C02R2SG
IRF7317TRPBF Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRF7509TR vs IRF7317TRPBF
NDS9942 TRANSISTOR 3 A, 20 V, 0.125 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power National Semiconductor Corporation IRF7509TR vs NDS9942
MMDF2C03HD Power Field-Effect Transistor, 2A I(D), 30V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8 Motorola Semiconductor Products IRF7509TR vs MMDF2C03HD
NDS9958D84Z Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation IRF7509TR vs NDS9958D84Z
IRF9952TRPBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRF7509TR vs IRF9952TRPBF
AUIRF9952QTR Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 International Rectifier IRF7509TR vs AUIRF9952QTR
IRF7105TRPBF Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7509TR vs IRF7105TRPBF

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