Datasheets
IRF9540NPBF by:

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRF9540NPBF by International Rectifier

Overview of IRF9540NPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRF9540NPBF

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 4 100
  • 4 $1.5000
  • 15 $0.9750
  • 53 $0.5625
$0.5625 / $1.5000 Buy Now
Bristol Electronics   8
RFQ
Quest Components 23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 6
  • 1 $1.9000
  • 4 $1.5200
$1.5200 / $1.9000 Buy Now
Quest Components 23 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 80
  • 1 $2.0000
  • 14 $1.0000
  • 61 $0.6000
$0.6000 / $2.0000 Buy Now
ComSIT USA HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Europe - 280
RFQ

Part Details for IRF9540NPBF

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IRF9540NPBF Part Data Attributes

IRF9540NPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF9540NPBF International Rectifier Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 430 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 76 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF9540NPBF

This table gives cross-reference parts and alternative options found for IRF9540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF9540NPBF vs IRF9540NPBF
AUIRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF9540NPBF vs AUIRF9540N
IRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF9540NPBF vs IRF9540N
Part Number Description Manufacturer Compare
IRFP9150 25A, 100V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRF9540NPBF vs IRFP9150
AUIRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG IRF9540NPBF vs AUIRF9540N
IRF9540NPBF Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF9540NPBF vs IRF9540NPBF
IRF9540N Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier IRF9540NPBF vs IRF9540N
IRFP9150 Power Field-Effect Transistor, 25A I(D), 100V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor IRF9540NPBF vs IRFP9150
IRFP9151 Power Field-Effect Transistor, 25A I(D), 80V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor IRF9540NPBF vs IRFP9151
FX30UM-2 Power Field-Effect Transistor, 30A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Powerex Power Semiconductors IRF9540NPBF vs FX30UM-2

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